Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing

Shen, Xinmin; Dai, Yifan; Deng, Hui; Guan, Chaoliang; Yamamura, Kazuya

doi:10.1364/oe.21.026123

Cited by 25 publications

(13 citation statements)

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“…The reason for this phenomenon could be the asymmetric distribution of the oxidation rate during the oxidation process. 3 The oxidation of SiC/Si to SiO 2 is a volume expansion process, which generates the swelling pressure. The distribution of this pressure is determined by the distribution of the oxidation rate.…”

Section: Methodsmentioning

confidence: 99%

“…By calculating the average height difference of the step, the oxidation depth can be obtained. The calculated anodic oxidation depths are 25, 38, 47, 58, 68, 88, 102, 120, 135, 145, 156, and 163 nm, respectively, and the corresponding oxidation times are 5, 10, 20, 30, 60, 120, 180, 300, 600, 900, 1200, and 1800 s. For the purpose of calculating the oxidation rate in the constant potential mode according to the classical DealGrove model, 3,15 the relationships between the anodic oxidation depth and the corresponding oxidation time are summarized in Fig. 8.…”

Section: Calculation Of Oxidation Ratementioning

confidence: 99%

“…[1][2][3] With the increasing standard for ultrasmooth surface finishing and the demand for high material removal rate (MRR) in the machining of RS-SiC substrate, methods for processing RS-SiC have become the research focus in the fields of optics and ceramics. 4,5 However, RS-SiC is a known difficult-to-machine material because of its high hardness and chemical inertness.…”

Section: Introductionmentioning

confidence: 99%

“…4,5 However, RS-SiC is a known difficult-to-machine material because of its high hardness and chemical inertness. 3 These properties make it inefficient to process RS-SiC with traditional mechanical or chemical methods, such as diamond turning 6,7 or plasma chemical vaporization machining (PCVM). 8 Meanwhile, the RS-SiC substrate is mainly composed of SiC and Si.…”

Section: Introductionmentioning

confidence: 99%

“…Anodic oxidation is a classical method for surface modification. 3,12 The electrolyte used in anodic oxidation of RS-SiC, which consists of hydrogen peroxide (H 2 O 2 ) and hydrochloric acid (HCl), has been proven as an effective oxidant to oxidize SiC specimen. 13,14 The anodic oxidation system is constructed to generate an oxide layer on RS-SiC, while a ceria slurry polishing system is built to verify the machinability of the oxide.…”

Section: Introductionmentioning

confidence: 99%

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Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Shen

Zhou

et al. 2015

Opt. Eng

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Abstract. Reaction-sintered silicon carbide (RS-SiC) is a promising optical material for the space telescope systems. Anodically oxidation-assisted polishing is a method to machine RS-SiC. The electrolyte used in this study is a mixture of hydrogen peroxide (H 2 O 2 ) and hydrochloric acid (HCl), and the oxidation potential has two modes: constant potential and high-frequency-square-wave potential. Oxide morphologies are compared by scanning electron microscope/energy dispersive x-ray spectroscopy and scanning white-light interferometer. The results indicate that anodic oxidation under constant potential can not only obtain a relatively smooth surface but also be propitious to obtain high material removal rate. The oxidation depth in anodic oxidation under constant potential is calculated by comparing surface morphologies before and after hydrofluoric acid etching. The theoretical oxidation rate is 5.3 nm∕s based on the linear Deal-Grove model. Polishing of the oxidized RS-SiC is conducted to validate the machinability of the oxide layer. The obtained surface roughness root-mean-square is around 4.5 nm. Thus, anodically oxidation-assisted polishing can be considered as an efficient method, which can fill the performance gap between the rough figuring and fine finishing of RS-SiC. It can improve the machining quality of RS-SiC parts and promote the application of RS-SiC products. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Methodsmentioning

confidence: 99%

Section: Calculation Of Oxidation Ratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Shen

Zhou

et al. 2015

Opt. Eng

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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO₃ as a Piezocatalyst and an Abrasive

Hu,

Feng,

Yan

et al. 2023

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Chemical mechanical polishing (CMP) offers a promising pathway to smooth third‐generation semiconductors. However, it is still a challenge to reduce the use of additional oxidants or/and energy in current CMP processes. Here, a new and green atomically smoothing method: Piezocatalytic‐CMP (Piezo‐CMP) is reported. Investigation shows that the Piezo‐CMP based on tetragonal BaTiO3 (t‐BT) can polish the rough surface of a reaction sintering SiC (RS‐SiC) to the ultra‐smooth surface with an average surface roughness (Ra) of 0.45 nm and the rough surface of a single‐crystal 4H‐SiC to the atomic planarization Si and C surfaces with Ra of 0.120 and 0.157 nm, respectively. In these processes, t‐BT plays a dual role of piezocatalyst and abrasive. That is, it piezo‐catalytically generates in‐situ active oxygen species to selectively oxidize protruding sites of SiC surface, yielding soft SiO2, and subsequently, it acts as a usual abrasive to mechanically remove these SiO2. This mechanism is further confirmed by density functional theory (DFT) calculation and molecular simulation. In this process, piezocatalytic oxidation is driven only by the original pressure and friction force of a conventional polishing process, thus, the piezo‐CMP process do not require any additional oxidant and energy, being a green and effective polishing method.

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Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing

Cited by 25 publications

References 25 publications

Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO₃ as a Piezocatalyst and an Abrasive

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Comparative analysis of oxidation methods of reaction-sintered silicon carbide for optimization of oxidation-assisted polishing

Cited by 25 publications

References 25 publications

Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Efficient processing of reaction-sintered silicon carbide by anodically oxidation-assisted polishing

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO3 as a Piezocatalyst and an Abrasive

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Piezocatalysis for Chemical–Mechanical Polishing of SiC: Dual Roles of t‐BaTiO₃ as a Piezocatalyst and an Abrasive