Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity

Teja, Pamulapati; Reddy, N. Nagendra; Panda, Deepak Kumar

doi:10.1007/978-981-16-3767-4_7

Cited by 12 publications

(4 citation statements)

References 13 publications

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“…The Junction is not involved in device implementation, so the junction leakages are reduced, and the novel structure of the device improves the control of the gate over the channel region. This indirectly increases the on current, so the device reports a high current ratio of 5.3x10 7 for K = 32 (T47D) breast cancer cells. On the other side, the cavity over the secondary channel region suppresses the ambipolar current with an increase in the K value of cancer cells; Fig.…”

Section: B: Impact Dielectric Constant Value(k) Of Cancer Cells On Dr...mentioning

confidence: 96%

“…On the other side, the cavity over the secondary channel region suppresses the ambipolar current with an increase in the K value of cancer cells; Fig. 7(b) gives the I off /I amb current ratio, and the device reports a high I off /I amb ratio of 1.256x10 7 for the T47D cancer cell. The transconductance plot for the proposed device is shown in Fig.…”

Section: B: Impact Dielectric Constant Value(k) Of Cancer Cells On Dr...mentioning

confidence: 99%

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A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Bitra,

Komanapalli

2023

Sens Imaging

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This work designs a novel dielectric modulated step channel Junctionless tunnel eld effect (DM-SC-JLTFET) for the label-free detection of breast cancer cells using their dielectric constant (K) values. The dielectric modulation technique is exploited to detect breast cancer cells (BCC) whose K values are observed at 200 MHz frequency using an open-ended coaxial probe technique. The charge plasma concept is employed to suppress the random dopant uctuation (RDF). The usage of this concept rendering the complex fabrication process simple and affordable. A novel step channel structure has been implemented with reduced substrate thickness for the TFET device that improves the e cacy of the biosensor. The proposed device uses on-current (I on ) and ambipolar current (I amb ) to measure the sensitivity of cancer biomolecules. An in-depth analysis has been carried out for the biosensor by considering performance parameters such as the electrostatics of the device, energy band diagram, lateral electric eld, and threshold voltage (V th ). The device sensitivity is analyzed using parameters like I on /I off , I off /I amb current ratio, Subthreshold Swing (SS), and V th . The proposed device reports high detection sensitivity of 2.683x10 6 and a low SS of 32 mV/dec for breast cancer cell biomolecule T47D (K = 32), effectively reducing the RDF effect. The simulated device shows enhanced sensitivity and higher compatibility for breast cancer cell detection, and this device will be an excellent alternative to classical vivo breast cancer detection.

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Section: B: Impact Dielectric Constant Value(k) Of Cancer Cells On Dr...mentioning

confidence: 96%

Section: B: Impact Dielectric Constant Value(k) Of Cancer Cells On Dr...mentioning

confidence: 99%

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Bitra,

Komanapalli

2023

Sens Imaging

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“…DNA) and neutral (e.g. biotin, streptavidin) biomolecules [5][6][7]. The dielectric modulated FET (DM-FET) based biosensor became popular in less time due to its simple design and effective operation.…”

Section: Introductionmentioning

confidence: 99%

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Reddy¹,

Panda²

2022

J. Micromech. Microeng.

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In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal source pocket Tunnel Field-Effect Transistor [DM-TMGOS-ZHP-TFET] structure has been investigated for the application of label free-biosensor. This work explores the advantage of gate work function engineering along with the gate-oxide-stack approach for the Z-shaped gate horizontal source pocket Tunnel Field-Effect Transistor [ZHP-TFET] for the first time. An asymmetric nano-cavity is created adjacent to the source-channel junction to immobilize the target biomolecules conjugation to the proposed device. The sensitivity of the device is thoroughly investigated in terms of average subthreshold swing (ss), threshold voltage(Vth) and the switching ratio (Ion/Ioff) of the proposed device with the variation of the dielectric constant value inside the nano-gap under the gate electrode. The device characteristics are investigated with different combinations of metal work functions to match the desired feature and sensitivity of the device. In addition, the sensitivity analysis of the proposed device is analyzed in the presence of both positive and negative charged biomolecules in the cavity region to study the charge effect on label-free detection of the device. A comparative study is conducted between a single metal gate ZHP-DM-TFET [SMG- ZHP-DM-TFET] biosensor with the DM-TMGOS- ZHP-TFET biosensor explores the advantage of gate-work function engineering with a gate-oxide-stack approach. Interestingly the DM-TMGOS- ZHP-TFET biosensor shows superior results with a high current ratio sensitivity of 103 which is ten times more than the SMG- ZHP-DM-TFET biosensor and this deice also exhibits low subthreshold characteristics.

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“…In recent years, the research community has exhibited a rising interest in field-effect transistors (FET)-based biosensors. FET biosensors are known for their high sensitivity, responsivity, scalability, and portability along with reduced costs and power consumption [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Ion-sensitive FET (ISFET) is a specialized FET sensor that accounts for a change in surface potential in the presence of a sensing insulating layer.…”

Section: Introductionmentioning

confidence: 99%

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

De¹,

Kanrar²,

Sarkar³

2022

Semicond. Sci. Technol.

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Field Effect Transistor (FET) pH sensors are being studied for a long time due to their low cost, sound sensitivity, and high operational speed. In recent times, Transition Metal Dichalcogenides (TMD) materials like MoTe2, MoS2, etc., have emerged as promising channel materials for energy-efficient electronic devices. TMD-based sensors show excellent results due to the high surface area-volume ratio and better bio-specific interaction. This paper proposes and analyses a MoTe2 channel-based dual-cavity accumulation MOSFET as a pH sensor. For a comprehensive study, a pH-FET noise model has been considered to investigate the amount of noise associated with the proposed FET under various ionic concentrations and device dimensions. The electrolytic semiconductor has been modeled based on ion dynamics for the simulation study. Site-Binding Model has been incorporated to capture the surface charge density fluctuation at the interface of electrolyte and gate-oxide for different pH values. The effect of gate length scaling on the device performance is studied to comprehend its scalability. With this MoTe2-based dual-cavity accumulation MOSFET sensor, a peak threshold sensitivity of 77 mV/pH has been obtained. To provide a comparative performance analysis of the proposed work, a benchmarking figure is included in the manuscript and a detailed fabrication methodology has also been presented. All simulations are done with an experimentally calibrated setup in SILVACO TCAD.

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Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity

Cited by 12 publications

References 13 publications

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

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Comparative Analysis of Different FET-Based Biosensor: Recent Advances in Device Structure and Sensitivity

Cited by 12 publications

References 13 publications

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

A Dielectric Modulated Step-Channel Junction-Less TFET (DM-SC-JLTFET) for Label-Free Detection of Breast Cancer Cells: Design and Sensitivity Analysis

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Noise analysis of MoTe2-based dual-cavity MOSFET as a pH sensor

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Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor