Comparaciones ópticas y estructurales de las películas de Óxido de Silicio rico en Silicio (SRO) depositadas por las técnicas LPCVD y HFCVD

Abstract

In this work, we conducted a comparative study of the optical and structural properties of Silicon Rich Oxide (SRO) films deposited by two chemical vapor deposition techniques: at Low Pressure (LPCVD) and activated by Hot Filament (HFCVD). SRO-LPCVD films were deposited at a silane and nitrous oxide pressures (R_0=P_(N_2 O)/P_(〖SiH〗_4 )) rate of R0=10 y R0=25. SRO-HFCVD films were deposited at a hydrogen pressure of 25 and 100 sccm, at a distance between source and substrate of 8 mm. To improve the optical properties, we have subjected the films obtained by both techniques to thermal treatments at high temperatures. The optical and structural characterizations that we used for comparison of the films were: Null Spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR) and Photoluminescence (FL), Scanning Electron Microscopy (SEM) and High-Resolution Transmission Electron Microscopy (HRTEM). The SEM microscopy corroborates the thicknesses of the SRO films obtained by Null Spectroscopy, likewise, the HRTEM microscopy corroborates the diameter size of the silicon nanocrystals (ncs-Si), which also were calculated theoretically with the band gap energy (Eg) obtained in the FL spectra. These characterizations show that either of the two techniques are excellent alternatives for obtaining SRO films with photoluminescent emission, which can be used for photodetector and electroluminescent devices.