Compact UWB BPF With Broad Stopband Based on Loaded-Stub and C-Shape SIDGS Resonators

Xie, Jianliang; Tang, Deshan; Shu, Yiyang; Luo, Xun

doi:10.1109/lmwc.2021.3136561

Cited by 13 publications

(4 citation statements)

References 42 publications

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“…A bandpass filter (BPF) is an integral part of the front end to regulate FCC mask emission. In literature, three different design methodologies were reported, including the cascade approach, multi-mode resonator (MMR) approach, and MMR with defected ground structure (DGS)-based UWB BPF to retain passband characteristics [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][20][21][22][23]. Conventional cascading of lowpass and highpass filters was adopted to the construct UWB BPF, which yielded good selectivity, but it exhibited a larger electrical size [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A miniaturized UWB bandpass filter with tunable cut-off frequencies employing rectangular open-loop defected ground structure

Verma

Sahu

Gupta

2023

Int. J. Microw. Wireless Technol.

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This article presents a compact rectangular impedance resonator (RIR)–based ultra-wideband bandpass filter with an improved reflection coefficient within the passband and controllable cut-off frequencies. The proposed filter consists of anti-parallel coupled RIR coupled with rectangular open-loop defected ground structure (ROL-DGS) etched on the ground plane. The ROL-DGS ensures better in-band and out-off-band characteristics with reduced size due to its high Q-factor. The short- and open-circuit stubs control the lower (fCL) and upper (fCU) 3-dB cut-off frequencies, respectively, by originating transmission zeros independently with the help of variations in design parameters. As a result, the filter having a compact size of 0.216λCL × 0.176λCL is achieved, where λCL is the corresponding guided wavelength at the lower cut-off frequency fCL of 2.95 GHz. Further, an equivalent circuit is also modeled to explain the working of the proposed filter, and equivalent lumped parameters were extracted. Simulated results reveal that the reported filter passes the frequencies effectively within 2.95–11.44 GHz with fractional bandwidth of 117.9%. The simulated insertion loss values within the passband are less than 1.17 dB, and the reflection coefficient is better than −19.6 dB. Further, the proposed filter is fabricated, and it was found that the measured and simulation results are in well agreement.

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Section: Introductionmentioning

confidence: 99%

A miniaturized UWB bandpass filter with tunable cut-off frequencies employing rectangular open-loop defected ground structure

Verma

Sahu

Gupta

2023

Int. J. Microw. Wireless Technol.

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“…W ITH ever-increasing demands of wireless communication systems, high performance bandpass filters (BPFs) are essential to 5G applications including sub-6-GHz and millimeter-wave (mm-wave). The BPFs using stepped-impedance resonator (SIR) [1]- [3], defected ground structure (DGS) [4]- [7], and substrate-integrated DGS (SIDGS) [8]- [11] are reported with low loss and wide stopband for sub-6-GHz application. To satisfy the requirements of 5G mm-wave system, the cavity [12]- [16] and substrateintegrated waveguide (SIW) [17]- [21] are used for BPF with good in-band performance.…”

Section: Introductionmentioning

confidence: 99%

Miniaturized 28-GHz Packaged Bandpass Filter With High Selectivity and Wide Stopband Using Multilayer PCB Technology

Rao

Qian

Zhou

et al. 2022

IEEE Microw. Wireless Compon. Lett.

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In this letter, a packaged bandpass filter (BPF) with a compact size of 1.5 × 1.5 × 0.315 mm 3 operating at 28 GHz is proposed. This BPF is implemented based on a multilayers printed circuit board (PCB) fabrication process with ultra-thin substrate. With the packaged configuration, the filter can not only reduce the circuit size and component insertion loss, but also eliminate the effect of electromagnetic (EM) radiation. To verify the mechanisms mentioned above, a packaged millimeter-wave (mm-wave) BPF with three transmission zeros is designed and fabricated. The measured results show that the proposed BPF has the merits of low insertion loss, high selectivity, and compact size. Meanwhile, this BPF can suppress harmonics with a rejection level of more than 24 dB up to 110 GHz. With these merits, the proposed BPF is attractive for 5G mm-wave application.

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“…Compared with the SIDGS implemented on PCB technology in previous work [35], [36], [37], [38], [39], the SIDGS on the 40-nm CMOS in this work is a stacked structure with etched defects at different metal layers, while the previous work has only one layer of etched defect. Meanwhile, the complete bottom ground of SIDGS on PCB is replaced by the grounded shield in the design of SIDGS using the CMOS process.…”

mentioning

confidence: 98%

“…This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ Recently, substrate-integrated defected ground structure (SIDGS) [35], [36], [37], [38], [39] is proposed for a series of high-performance passive components, which shows merits of wide stopband, low radiation loss, compact size, and low insertion loss. However, all these components are implemented on PCB, which is hard to integrate with active circuits directly.…”

mentioning

confidence: 99%

On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS

Tang

Luo

2023

IEEE Trans. Microwave Theory Techn.

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In this article, two millimeter-wave substrateintegrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The secondorder filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and ±1.1 • , respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB.

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Compact UWB BPF With Broad Stopband Based on Loaded-Stub and C-Shape SIDGS Resonators

Cited by 13 publications

References 42 publications

A miniaturized UWB bandpass filter with tunable cut-off frequencies employing rectangular open-loop defected ground structure

A miniaturized UWB bandpass filter with tunable cut-off frequencies employing rectangular open-loop defected ground structure

Miniaturized 28-GHz Packaged Bandpass Filter With High Selectivity and Wide Stopband Using Multilayer PCB Technology

On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS

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