“…In [12,13] GaN power modules are proposed for a half-bridge three-level ANPC inverter, where power, driving, and conditioning circuits are integrated on the same PCB. In [12], an eight-layers printed circuit board (PCB) is used, and GaN HEMTs are paralleled operated according to the chosen modulation strategy, with three devices operating at high switching frequency and two devices switching at lowfrequency. In [13], a four-layer PCB is employed, with GaN HEMTs placed on the top and bottom layers, and their switching pattern is controlled via optical receivers.…”