2004
DOI: 10.1109/jproc.2004.829003
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Compact solid-State switched pulsed power and its applications

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Cited by 207 publications
(17 citation statements)
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“…The capacitance is determined by the dimensions and material of the crystal; therefore, the main way for the reduction of the rise/fall time of Pockels cell is improvement of the electronics of the high voltage driver. There are only a few usable concepts for high voltage driver design: metal-oxide-semiconductor field-effect transistors (MOSFET) or bipolar avalanche transistors connected in series [21]. The high voltage drivers based on the MOSFETs connected in series provide the laser beam modulation frequency up to 1 MHz with the 30 ns rise/fall time of pulse and adjustable pulse width [22][23][24][25][26][27].…”
Section: Introductionmentioning
confidence: 99%
“…The capacitance is determined by the dimensions and material of the crystal; therefore, the main way for the reduction of the rise/fall time of Pockels cell is improvement of the electronics of the high voltage driver. There are only a few usable concepts for high voltage driver design: metal-oxide-semiconductor field-effect transistors (MOSFET) or bipolar avalanche transistors connected in series [21]. The high voltage drivers based on the MOSFETs connected in series provide the laser beam modulation frequency up to 1 MHz with the 30 ns rise/fall time of pulse and adjustable pulse width [22][23][24][25][26][27].…”
Section: Introductionmentioning
confidence: 99%
“…We established a DBD generator with pulse power to produce plasma. The pulse power source we selected was a nanosecond-pulse generator based on semiconductor opening switches (SOS) (41), for which the parameters were 44-kV peak-to-peak voltage, 300-ns pulse rise time, 250-ns pulse width, and 600-Hz pulse repetition frequency.…”
Section: Methodsmentioning
confidence: 99%
“…Various topologies of high voltage pulse generators (Pockels cell drivers) have been used for the control of the Pockels cells: high frequency triodes (Bado et al 1998), krytrons (Hyer et al 2008;Hyde et al 1977), thyratrons (Barbosa et al 2007;Barbosa et al 2008), discharge (Essmann et al 2018;Kimura 2017) and drift-step-recovery diodes (Kesar et al 2016). Each of the topologies has its advantages and disadvantages (Jiang et al 2004), but the most common are two: MOSFET and avalanche bipolar transistors. In these topologies, the transistors are connected in series to distribute high voltage stress.…”
Section: Overview Of the Principle And Problems Of Pockels Cellsmentioning
confidence: 99%