2014
DOI: 10.1039/c4ta04251d
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Combustion synthesis of porous Pt-functionalized SnO2 sheets for isopropanol gas detection with a significant enhancement in response

Abstract: A Pt-functionalized SnO2 sheet based gas sensor displayed a response value of 190.5 for 100 ppm isopropanol gas.

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Cited by 113 publications
(51 citation statements)
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“…Once the gas is completely drained, the sensor will be exposed to the atmosphere again and refreshed by air. The reaction between methanal and ionic oxygen species can be depicted as in Equation (6) [60]. The Schematic illustration of the SnO 2 nanorods array sensing mechanism is shown in Figure 13.…”
Section: Resultsmentioning
confidence: 99%
“…Once the gas is completely drained, the sensor will be exposed to the atmosphere again and refreshed by air. The reaction between methanal and ionic oxygen species can be depicted as in Equation (6) [60]. The Schematic illustration of the SnO 2 nanorods array sensing mechanism is shown in Figure 13.…”
Section: Resultsmentioning
confidence: 99%
“…The reasons includes electron interactions between Pd/Pt and SnO 2 , the catalytic activity of Pd/Pt accelerates the dissociation of oxygen molecules and causes a spillover of the absorbed oxygen ions on the surface of SnO 2 -Pd-Pt-In 2 O 3 composite. More absorbed oxygen ions provides more sensing sites and shows high response [51,52].…”
Section: Resultsmentioning
confidence: 99%
“…The sensing performance of SnO 2 gas sensors are manifestly influenced by size distribution, microstructure, exposed facets and surface state (surface defects and surface adsorption) [5,7]. As the particles size decrease, the fraction of atoms at the surface and surface-to-volume ratio increase.…”
Section: Introductionmentioning
confidence: 99%
“…Gas sensors made from metal oxide semiconductors have been fabricated widely owing to the changes in its electrical conductivity under exposure to the test gases. Among plentiful metal oxide semiconductors, the SnO 2 (tin dioxide), an important n-type oxide and wide band gap (3.6 eV, at 300 K) semiconductor with high exciton binding energy of 130 meV, is an attractive choice as it shows excellent electrochemical and catalytic activation properties [4][5][6].…”
Section: Introductionmentioning
confidence: 99%