Combining GeO₂ passivation strategies aiming at dielectric layers with superior properties on germanium substrates

Abstract

Hf and N incorporation in GeO2 suppresses its volatilization and further oxidation of the Ge substrate.

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

“…Consequently, hindered the growth of unstable GeO x compounds and reduced volatile GeO desorption while maintaining the integrity of GeO 2 . 55,56 Therefore, based on the Ge 3d spectra observation it can be suggested that 10 minutes sample exhibits the superior configuration of stoichiometric contents with a minority composition of GeO x traps that might help in improving the device performance of the high-k interface.…”

“…It is assumed that substantial incorporation of N+ atom increases Ge 3 N 4 density at this oxidation/nitridation durations which obstructed the O vacancy diffusion paths and also retarded the disproportionate transportation of O atoms into the Ge substrate. Consequently, hindered the growth of unstable GeO x compounds and reduced volatile GeO desorption while maintaining the integrity of GeO 2 55,56 . Therefore, based on the Ge 3d spectra observation it can be suggested that 10 minutes sample exhibits the superior configuration of stoichiometric contents with a minority composition of GeO x traps that might help in improving the device performance of the high‐ k interface.…”