Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Romanyuk, O.; Paszuk, Agnieszka; Gordeev, Ivan; Wilks, Regan G.; Ueda, Shigenori; Hartmann, Claudia; Félix, Roberto; Bär, Marcus; Schlueter, Christoph; Gloskovskii, A.; Bartoš, I.; Nandy, Manali; Houdková, J.; Jiřı́ček, P.; Jaegermann, Wolfram; Hofmann, Jan P.; Hannappel, Thomas

doi:10.1016/j.apsusc.2022.154630

Cited by 5 publications

(6 citation statements)

References 48 publications

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“…Such a broadening can arise from changes in chemical structure (i.e., formation of new species beneath the HTM) or electronic structure profiles. Due to the relatively high information depth of HAXPES measurements, probing a sample volume in which band bending occurs may result in a line broadening − rather than or in addition to a shift in peak position. As discussed above, we do not see any indications of pronounced chemical changes in the CsPbI 3 films.…”

Section: Resultsmentioning

confidence: 99%

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells

Iqbal,

Félix,

Musiienko

et al. 2024

J. Am. Chem. Soc.

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Here, we report a detailed surface analysis of dry- and ambient air-annealed CsPbI3 films and their subsequent modified interfaces in perovskite solar cells. We revealed that annealing in ambient air does not adversely affect the optoelectronic properties of the semiconducting film; instead, ambient air-annealed samples undergo a surface modification, causing an enhancement of band bending, as determined by hard X-ray photoelectron spectroscopy measurements. We observe interface charge carrier dynamics changes, improving the charge carrier extraction in CsPbI3 perovskite solar cells. Optical spectroscopic measurements show that trap state density is decreased due to ambient air annealing. As a result, air-annealed CsPbI3-based n–i–p structure devices achieved a 19.8% power conversion efficiency with a 1.23 V open circuit voltage.

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Section: Resultsmentioning

confidence: 99%

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells

Iqbal,

Félix,

Musiienko

et al. 2024

J. Am. Chem. Soc.

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“…It includes PES depth-profiling methods for which ion gun etching cycles and PES measurements are alternated. [19,20,22] In these works, Romanyuk et al combined XPS with Ar gas cluster ion beam sputtering, they studied the GaP/Si(001) interface and the addition of As to suppress the formation of antiphase domains. [20,22] The top-down approach also includes the more recent TCS-PES method.…”

Section: Introductionmentioning

confidence: 99%

“…[19,20,22] In these works, Romanyuk et al combined XPS with Ar gas cluster ion beam sputtering, they studied the GaP/Si(001) interface and the addition of As to suppress the formation of antiphase domains. [20,22] The top-down approach also includes the more recent TCS-PES method. A TCS is a very low-angle cross section that is extended enough so that nanometer-sized structures can be resolved despite the tens of micrometers lateral resolution of the PES.…”

Section: Introductionmentioning

confidence: 99%

“…Depth-profiling XPS confirmed the tendency of In to segregate at the GaAs|GaInP interface and give rise to mixed phases. [19,20] Strategies to investigate buried interfaces with PES can be divided into two main groups: bottom-up and top-down approaches. The first strategy mainly consists of so-called interface experiments.…”

Section: Introductionmentioning

confidence: 99%

“…Depth‐profiling XPS confirmed the tendency of In to segregate at the GaAs|GaInP interface and give rise to mixed phases. [ 19,20 ]…”

Section: Introductionmentioning

confidence: 99%

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Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Maheu

Pour

Damestoy

et al. 2022

Adv Materials Inter

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Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III–V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross Section Photoelectron Spectroscopy (TCS‐PES) approach is promising to address such a challenge. That the TCS‐PES can be used to study the relevant heterojunction in epitaxial III–V architectures prepared by metalorganic chemical vapor deposition is demonstrated here. A MULTIPREP polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve the reproducibility of the polishing procedure. With this procedure, that preparing the TCS of III–V semiconductor devices with tapering angles lower than 0.02° is possible is demonstrated. The PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks. Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

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Integration of Multijunction Absorbers and Catalysts for Efficient Solar‐Driven Artificial Leaf Structures: A Physical and Materials Science Perspective

Hannappel,

Shekarabi,

Jaegermann

et al. 2024

Solar RRL

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Artificial leaves could be the breakthrough technology to overcome the limitations of storage and mobility through the synthesis of chemical fuels from sunlight, which will be an essential component of a sustainable future energy system. However, the realization of efficient solar‐driven artificial leaf structures requires integrated specialized materials such as semiconductor absorbers, catalysts, interfacial passivation, and contact layers. To date, no competitive system has emerged due to a lack of scientific understanding, knowledge‐based design rules, and scalable engineering strategies. Here, we will discuss competitive artificial leaf devices for water splitting, focusing on multi‐absorber structures to achieve solar‐to‐hydrogen conversion efficiencies exceeding 15%. A key challenge is integrating photovoltaic and electrochemical functionalities in a single device. Additionally, optimal electrocatalysts for intermittent operation at photocurrent densities of 10‐20 mA cm‐2 must be immobilized on the absorbers with specifically designed interfacial passivation and contact layers, so‐called buried junctions. This minimizes voltage and current losses and prevents corrosive side reactions. Key challenges include understanding elementary steps, identifying suitable materials, and developing synthesis and processing techniques for all integrated components. This is crucial for efficient, robust, and scalable devices. Here, we discuss and report on corresponding research efforts to produce green hydrogen with unassisted solar‐driven (photo‐)electrochemical devices.This article is protected by copyright. All rights reserved.

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Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Cited by 5 publications

References 48 publications

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Integration of Multijunction Absorbers and Catalysts for Efficient Solar‐Driven Artificial Leaf Structures: A Physical and Materials Science Perspective

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Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Cited by 5 publications

References 48 publications

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI3 Perovskite Solar Cells

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI3 Perovskite Solar Cells

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Integration of Multijunction Absorbers and Catalysts for Efficient Solar‐Driven Artificial Leaf Structures: A Physical and Materials Science Perspective

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Product

Resources

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Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells

Unveiling the Potential of Ambient Air Annealing for Highly Efficient Inorganic CsPbI₃ Perovskite Solar Cells