Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

Iwasaki, Tatsuya; Itagaki, Naho; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

doi:10.1063/1.2749177

Cited by 225 publications

(190 citation statements)

References 14 publications

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“…For room temperature-fabricated AOS TFTs, Canon fi rst succeeded in fabricating a-IGZO TFTs by radiofrequency (RF) magnetron sputtering [48]. Combinatorial approaches have been employed to screen multi-component AOS systems, including the In-Ga-Zn-O system [49] and Zn-Sn-O (ZTO) system [50]. Other materials, such as a-In-Zn-O (a-IZO) [51], a-In-Ga-O (a-IGO) [14] and a-Ga-Sn-Zn-O (a-GTZO) [52], have also been reported.…”

Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Materials and Processesmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…Amorphous oxide semiconductors such as In-Ga-Zn-O, [1][2][3][4] In-Zn-O, 5,6 Zn-Sn-O, [7][8][9][10] In-Sn-O, 11 and In-Zn-Sn-O 12,13 have attracted considerable attention as channel materials for next-generation thin-film transistors (TFTs). Compared with crystalline materials, amorphous oxide materials have advantages because of their low processing temperatures and uniformity of device characteristics.…”

Section: Introductionmentioning

confidence: 99%

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Umeda

Miyasako

Sugiyama

et al. 2013

Journal of Applied Physics

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Ultraviolet–ozone (UV/O3) treatment was adopted to the fabrication of solution-processed amorphous In–Ga–Zn–O thin-film transistors (TFTs), with metal composition of In:Ga:Zn = 1:1:1 represented by InGaZnO4. By applying UV/O3 treatment In–Ga–Zn–O gel films, their condensation was notably enhanced through decomposition of organic- and hydrogen-based elements, which drastically improved the quality of the amorphous InGaZnO4 films. As a result, high TFT performance, with values of on/off ratio, 108; subthreshold swing, 150 mV/decade; threshold voltage, 9.2 V; and field-effect mobility, 5.1 cm2 V−1 s−1, was achieved.

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“…29 It has been reported that the roles of indium and gallium are related to the mobility and off-current leakage, respectively. 33,34 In addition, zinc affects the S.S., modulation of the shallow tail state and reduction of interstitial states at the interface. 34,35 For this reason, the concentration ratio of each component in the film plays a significant role in determining the device performance of TTFTs.…”

Section: Methodsmentioning

confidence: 99%

“…33,34 In addition, zinc affects the S.S., modulation of the shallow tail state and reduction of interstitial states at the interface. 34,35 For this reason, the concentration ratio of each component in the film plays a significant role in determining the device performance of TTFTs. Hafnium possesses an atomic radius close to that of indium and is easily bonded with oxygen resulting in lower carrier concentration sensitivity, which improves the device performance.…”

Section: Methodsmentioning

confidence: 99%

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

2015

AIP Advances

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Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

Cited by 225 publications

References 14 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

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