Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties

Abstract

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO(x)) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO(x) shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO(x) nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO(x) shell acts as an effective insulating layer. The ZnTe-SiO(x) nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

Electrical transport properties and ultrafast optical nonlinearity of rGO–metal chalcogenide ensembles

“…The SEM images of the composite samples ( show that the presence of rGO causes efficient charge transfer from the conduction band of ZnSe/ZnTe to rGO sheets which results in quenching of the emission band in the composites. 36 The improved optical absorption and signicant quenching of the emission band of the composites are advantageous for optoelectronic and photonic device applications.…”

One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications

“…The p-type characteristic of the unintentionally doped ZnTe NRs (also for ZnTe in other forms) was suggested to originate from the acceptor defects such as Zn vacancies in the materials [122]. Cao et al demonstrated the one-step growth of coaxial p-ZnTe/SiO x nanocables by thermal evaporation [123]. The SiO x shell was insulative and could sever directly as a dielectric layer, facilitating the integration of ZnTe NWs in FETs and chemical and biological sensors.…”

“…p-ZnSe, p-CdTe, p-ZnTe, metals with high work functions, i.e., Au, Pd and Ni have exhibited reliable Ohmic contacts [52,77,[123][124][125].…”

Uniform silica coating of isoprene-passivated germanium nanowires via Stöber method

“…18,19 Traditional silica coating process is carried out by carbothermal reduction of SiO 2 nanomaterials with active carbon at temperatures higher than 1250 C in owing nitrogen atmosphere. [20][21][22][23][24][25] Afzaal et al provided a route to prepare PbS/ SiO 2 coaxial structure by chemical vapor deposition (CVD) method on silicon substrate at temperature between 650 and 700 C. 26 Zhang et al 27 and Shi et al 28 have employed a laser ablation method to synthesize the coaxial nanostructure containing a silica inter-layer and carbon outer-shell. For fabricating Ge-SiO 2 core-shell nanostructure, Huang et al reported a conventional furnace system to prepare Ge-SiO 2 nanotubes.…”