Co-existence of Radiative and Non-Radiative Surface Plasmon Resonance Modes: Power Balance and Influence of Film Morphology

Oliveira, Leiva Casemiro; Lima, A.M.N.; Neff, H.; Sousa, Tiago Abreu Tavares de; Thirstrup, Carsten; Holzhüter, G.

doi:10.1007/s11468-016-0419-7

Cited by 4 publications

(2 citation statements)

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“…The strong excited-electron field improves the excitation rate of the plasmon polaritons, and increases the radiative decay rate of photons close to the electrode nanostructures, leading to weaker resonance in the NW. 44,45 When the extrinsic light is irradiated, the plasmon coupling between the photons and ZnO NWs induces the increment of the radiative decay rate of the photon. 44−46 The work function of the ZnO NW is lower than that of Au, so the electrons in the NW are more likely to flow into the Au to balance their Fermi level.…”

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confidence: 99%

“…According to LSPP theory, when the OLED is closer to the metal nanostructures, the excited-electron field gets stronger. The strong excited-electron field improves the excitation rate of the plasmon polaritons, and increases the radiative decay rate of photons close to the electrode nanostructures, leading to weaker resonance in the NW. , When the extrinsic light is irradiated, the plasmon coupling between the photons and ZnO NWs induces the increment of the radiative decay rate of the photon. − The work function of the ZnO NW is lower than that of Au, so the electrons in the NW are more likely to flow into the Au to balance their Fermi level. As a result, when the OLED is closer to the Au electrode, most of the electrons are generated in the section of the NW that is sandwiched by the OLED, resulting in a weaker resonant peak in the NW.…”

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confidence: 99%

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Ultra-High-Responsivity Vertical Nanowire-based Phototransistor under Standing-Wave Plasmon Mode Interaction Induced by Near-Field Circular OLED

Asare‐Yeboah

et al. 2020

J. Phys. Chem. Lett.

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High-responsivity photodevices are strongly desired for various demanding applications, such as optical communications, logic circuits, and sensors. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance devices. Unfortunately, many practical optoelectronic devices exhibit intermediate sizes where resonant enhancement effects seem to be insignificant. Here we design and fabricate an ultra-high-responsivity organic-light-emitting-diode-induced nanowire resonance phototransistor (ONRPT) based on standing-wave resonance in the nanoscale cavity, subjected to a nearfield light. Observations of the ONRPT in standing-wave resonance mode indicate a >10 4 enhancement in the on/off ratio and a six times higher subthreshold slope when compared with the ONRPT in non-resonance mode. The ONRPT, which leads itself to outstanding electrical and favorably stable performance, opens up a plethora of opportunities for high-efficiency energy devices and allows for nanowire applications in the solar cell, piezo-photonic detectors, and optical modulators.

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confidence: 99%