Handbook of Thin Film Deposition 2012
DOI: 10.1016/b978-1-4377-7873-1.00007-3
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CMP Method and Practice

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Cited by 6 publications
(5 citation statements)
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“…However, the immensely complex, miniaturized architectures of the sub-10 nm technology node have substantially compounded the chemical designs of CMP slurries. 1,2 These slurries typically contain multiple chemical additives, including unconventional complexing agents, corrosion inhibitors, strong oxidizers, and stabilizers that tend to remain as persistent residues on CMP processed surfaces. If not effectively removed by PCMPC, these residues adversely affect device performance.…”
mentioning
confidence: 99%
“…However, the immensely complex, miniaturized architectures of the sub-10 nm technology node have substantially compounded the chemical designs of CMP slurries. 1,2 These slurries typically contain multiple chemical additives, including unconventional complexing agents, corrosion inhibitors, strong oxidizers, and stabilizers that tend to remain as persistent residues on CMP processed surfaces. If not effectively removed by PCMPC, these residues adversely affect device performance.…”
mentioning
confidence: 99%
“… Isopoda , Asellota , Janiroidea , Paramunnidae (in part): A Austrosignum latum (after Just and Wilson (2021) B Boreosignum sp. A (after Cadien 2008 ) C Munnogonium erratum , C1 male pereopod 2 (after Wilson 1997 ) D Munnogonium tillerae D1 male pereopod 2 (after Just and Wilson (2021) . Pleurocopidae : E Pleurocope floridensis (Caribbean species = representative for Pleurocope sp.…”
Section: Resultsmentioning
confidence: 99%
“…Body length < 1 mm. See Cadien (2008 : voucher sheet for Boreosignum sp. IS1 available from SCAMIT Toolbox at https://www.scamit.org ; specimens examined 5 April 2008, D. B. Cadien), Maloney et al (2008) , and SCAMIT (2012 – 2021 ).…”
Section: Resultsmentioning
confidence: 99%
“…After this step, a Cu seed layer is also deposited with the same method, followed by electrochemical plating (ECP) of Cu [57,58]. After Cu deposition, chemical mechanical polishing (CMP) was performed on top to grind down the extra portion of Cu and expose the porous dielectric layer [59,60]. An NH 3 or H 2 plasma clean is performed to remove copper oxides prior to the deposition of the cap layer for adhesion improvement [61,62].…”
Section: Dual-damascene Process and Plasma-induced Damagementioning
confidence: 99%