CMOS readout circuitry for ISFET microsystems

Morgenshtein, Arkadiy; Sudakov-Boreysha, Liby; Dinnar, Uri; Jakobson, C.G.; Nemirovsky, Y.

doi:10.1016/j.snb.2003.08.007

Cited by 56 publications

(29 citation statements)

References 4 publications

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“…Drift has been shown to be temperature [1], pH [2], and ion transport dependent [3]. Attempts to mitigate the effects of drift by means of software compensation [4] and hardware configurations [5] have shown progress in making ISFETs adequately stable for commercial application. Further advancements are necessary to enable widespread use of ISFETs as pH-sensitive devices.…”

Section: Introductionmentioning

confidence: 99%

Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

Welch

Shah

Ozev

et al. 2013

IEEE Electron Device Lett.

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We demonstrate the cycling of electric fields within an ion-sensitive field-effect transistor (ISFET) as a method to control drift. ISFETs had a repeatable drift pattern when cycling the vertical electric field by changing the voltage between the reference electrode and the substrate. Cycling the horizontal electric field, the voltage between the drain and source of the device, showed no effect, causing the device to continue to drift as it would during normal operation. Results were confirmed with multiple pH buffer solutions. An ISFET was modeled using ATHENA. The simulation included the electrolyte modeled as a modified intrinsic semiconductor. Empirical results are confirmed with device-level simulations of an ISFET using Silvaco TCAD. The model produced a scaled current of 90 μA, which is of similar order to the experimental values of 146 μA. The repeatable drift behavior could be easily reconciled to permit the use of ISFETs for long-term continuous monitoring applications.Index Terms-Biomedical monitoring, drift, ion-sensitive fieldeffect transistor (ISFET).

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Section: Introductionmentioning

confidence: 99%

Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

Welch

Shah

Ozev

et al. 2013

IEEE Electron Device Lett.

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“…Ψ eol is the potential wh ich is pH-independent; it can be viewed as a common-mode input signal for an ISFET interface circuit in any pH buffer solution and can be nullified during system calibration and measurement procedures with a typical value of 50 mV [10]. χ sol is the surface dipole potential of the solvent being independent of pH., the terms in the parentheses are almost the same as that of the MOSFET threshold voltage except that of absence of the gate metal function.…”

Section: Isfetmentioning

confidence: 99%

Performance Analysis of Various Readout Circuits for Monitoring Quality of Water Using Analog Integrated Circuits

Whig¹,

Ahmad²

2012

IJISA

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Abstract-This paper presents a co mparative performance study of various analog integrated circuits (namely CC-II, DVCC, CDBA and CDTA ) used with ISFET for monitoring the quality of water. The use of these active co mponents makes the implementation simp le and attractive. The functionality of the circu its are tested using Tanner simu lator version 15 fo r a 70nm CM OS process model also the transfer functions realization for each is done on MATLA B R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for all scheme is simu lated on Xilin x ISE 10.1 and various simu lation results are obtained and its is found that DVCC is most stable and consume maximu m power whereas CC-II is the least stable and consumes minimu m power amongst all the four deployed analog IC's. Detailed simulat ion results are included in the paper to give insight into the research work carried out.

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“…Where E Ref is Potential of reference electrode, ∆ф 1j is the potential drop between the reference electrode and the solution, which typically has a value of 3mV [9]. Ψ eol is the potential which is pH-independent; it can be viewed as a common-mode input signal for an ISFET interface circuit in any pH buffer solution and can be nullified during system calibration and measurement procedures with a typical value of 50 mV [10].…”

Section: Fig4 Sub Circuit Block Of Isfet Macro Modelmentioning

confidence: 99%

DVCC based Readout Circuitry for Water Quality Monitoring System

Whig¹,

Ahmad²

2012

IJCA

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A new configuration realizing water quality monitoring device using ISFET involving CMOS differential voltage current conveyor (DVCC) based low pass filter free from trans-conductance variation using Low-voltage PMOS bulkdriven cascade current mirror (P MOS BDCCM) current mirrors is proposed. The circuit uses four DVCCs as active elements and together with two capacitors and five resistors as passive elements, only one current mirror. The use of this active component makes the implementation simple and attractive. The functionality of the circuit is tested using Tanner simulator version 15 for a 70nm CMOS process model also the transfer function realization is done on MATLAB R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for the same scheme is simulated on Xilinx ISE 10.1 and various simulation results are obtained. Simulation results are included to demonstrate the results. General Terms

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CMOS readout circuitry for ISFET microsystems

Cited by 56 publications

References 4 publications

Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset

Performance Analysis of Various Readout Circuits for Monitoring Quality of Water Using Analog Integrated Circuits

DVCC based Readout Circuitry for Water Quality Monitoring System

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