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Cited by 80 publications
(42 citation statements)
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“…In this work, we employ complementary metal oxide semiconductor (CMOS)-MEMS technology to fabricate a micromachined RF switch with low actuation voltage of 12 V, and its pull-in voltage is lower than that of Wang et al [4], Angira et al [5], Gao et al [6], Giffney et al [7], Yang et al [8], Park et al [9] and Zheng et al [10]. The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…In this work, we employ complementary metal oxide semiconductor (CMOS)-MEMS technology to fabricate a micromachined RF switch with low actuation voltage of 12 V, and its pull-in voltage is lower than that of Wang et al [4], Angira et al [5], Gao et al [6], Giffney et al [7], Yang et al [8], Park et al [9] and Zheng et al [10]. The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…In contrast to post-machining additive BEOL-compatible layers as described in the previous section, CMOS-MEMS structures can be created using BEOL layers existing in the standard CMOS technology, including interconnect-metal, gate/resistance polysilicon, and interlayer dielectric. (30,31) In comparison with the aforementioned approach, it is widely accepted that CMOS layer machining allows lower fabrication cost and faster lead time by removing the additional masks and lithography steps for MEMS fabrication. Figure 2 depicts the detailed cross sections of 0.35 and 0.18 µm CMOS processes showing that the advanced technology node possesses more BEOL layers for flexible selection on routing and MEMS structure material.…”
Section: Oxide-removal Postfabrication Approachmentioning
confidence: 99%
“…These changes can be detected using optical, capacitive, piezoresistive or piezoelectric sensing mechanisms. A MEMS resonator incorporating a piezoelectric material, for example, can directly convert electrical to mechanical motion (and vice versa) [6] allowing direct integration on-chip with CMOS technology to form a miniaturized sensor which can be interrogated using wireless communication [7].…”
Section: Introductionmentioning
confidence: 99%