I. Kegel, M. Sztucki, T. H. Metzger, D. Lubbert, J. Arthur, J.R. Patel
Abstract:AbstractIn a grazing incidence x-ray diffuse scattering study of defects in boron implanted and annealed silicon we have discovered narrow rods of intensity along  directions. These diffuse rods of intensity arise from stacking faults formed in the early stages of annealing in the range around 1000°C. From the width of the stacking fault induced rods we can estimate their size, while the integrated intensity is a measure of the total stacking fault area in the implanted layer. Surprisingly we find that th…
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