MRS Proc. 2000 DOI: 10.1557/proc-610-b5.5 View full text
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I. Kegel, M. Sztucki, T. H. Metzger, D. Lubbert, J. Arthur, J.R. Patel

Abstract: AbstractIn a grazing incidence x-ray diffuse scattering study of defects in boron implanted and annealed silicon we have discovered narrow rods of intensity along [111] directions. These diffuse rods of intensity arise from stacking faults formed in the early stages of annealing in the range around 1000°C. From the width of the stacking fault induced rods we can estimate their size, while the integrated intensity is a measure of the total stacking fault area in the implanted layer. Surprisingly we find that th…

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