MRS Proc. 2000 DOI: 10.1557/proc-610-b8.1 View full text
Dario Nobili, Sandro Solmi, Jenta Shao, Marco Merli

Abstract: AbstractClustering equilibrium was studied on silicon on insulator specimens uniformly doped with As at concentrations CAs up to 7.6 × 1020 cm−3. Values of the carrier density n* after equilibration at 700, 800 and 900°C are reported. It is shown that both the concentration and the temperature dependence of n* can be accurately simulated by a simple cluster model detailed in the Appendix. The analysis of the clustering kinetics of these compositions was performed at temperatures in the range 550 to 800°C. It i…

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