2007
DOI: 10.1002/chin.200741018
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Jesse B. Tice,
Andrew V. G. Chizmeshya,
Radek Roucka
et al.

Abstract: Germanium I 4700 ClnH6-nSiGe Compounds for CMOS Compatible Semiconductor Applications: Synthesis and Fundamental Studies. -The new family of chlorinated Si-Ge hydrides based on the formula ClnH6-nSiGe is synthesized for semiconductor applications by reaction with BCl3. The built-in Cl functionalities are specifically designed to facilitate selective growth compatible with CMOS processing. The compounds are characterized by NMR, FTIR, mass spectroscopy, and DFT calculations. Depositions of (III) and (VI) on Si…

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