Chemistry in the “Front End of the Line” (FEOL)

Martín, F.; Hartmann, Jean‐Michel; Carron, V.; Tiec, Y. Le

doi:10.1002/9781118578070.ch1

Chemistry in Microelectronics 2013

DOI: 10.1002/9781118578070.ch1

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Chemistry in the “Front End of the Line” (FEOL)

F. Martín¹,

Jean‐Michel Hartmann²,

V. Carron³

et al.

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2016

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“…In further studies disilane was used as a dopant source to exceed the doping level of 10 19 cm −3 suit− able for future applications in QCLs. Compared to silane, disilane decomposes at lower temperatures due to the weaker Si−Si bond (226 kJ/mol) in Si 2 H 6 than the Si−H bond in SiH 4 (318 kJ/mol) [10] what gives a higher doping efficiency. The influence of IV/III ratio on the electron concentration in InGaAs epilayers for disilane and the lowest growth rate (1.08 μm/h) is presented in Fig.…”

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confidence: 99%

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Ściana

Badura

Dawidowski

et al. 2016

Opto-Electronics Review

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The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact lay− ers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a dis− tinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of -240¸-780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

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confidence: 99%

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Ściana

Badura

Dawidowski

et al. 2016

Opto-Electronics Review

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Chemistry in the “Front End of the Line” (FEOL)

Cited by 1 publication

References 162 publications

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

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