Chemisorption of HCl, Cl2 and F2 on the Si(100) surface

Craig, B.I.; Smith, P. V.

doi:10.1016/0039-6028(92)90474-k

Cited by 42 publications

(16 citation statements)

References 36 publications

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“…1͑a͒ react with iodoethane. The reaction most likely follows the dissociation pathways similar to that of ethanol, 29 water, 30-33 hydrogen chloride, 34 and iodomethane, 35 which results in the halogen and ethyl group bound to the silicon atoms of the same surface silicon dimer, as shown in Fig. 1͑b͒.…”

Section: Introductionmentioning

confidence: 94%

Infrared spectroscopy studies of iodoethane on Si(100)-2×1: Adsorption and thermal decomposition leading to adsorbate ordering

Bulanin

Shah

Teplyakov

2001

The Journal of Chemical Physics

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Articles you may be interested inInfrared spectroscopy study of adsorption and photodecomposition of formic acid on reduced and defective rutile TiO2 (110) surfaces J. Vac. Sci. Technol. A 32, 061402 (2014); 10.1116/1.4898568Thermal decomposition of CH3CHO studied by matrix infrared spectroscopy and photoionization mass spectroscopyThe adsorption and chemical transformation of iodoethane were studied on a Si(100)-2ϫ1 surface using multiple-internal reflection Fourier-transform infrared spectroscopy ͑MIR-FTIR͒. The C-H and Si-H stretch vibrations served as fingerprints of all surface transformations. Although ethyl groups are stable on the Si(100)-2ϫ1 surface at room temperature, thermal annealing studies suggest the reaction-limited formation of ethylene, a major hydrocarbon reaction product, accompanied by the loss of hydrogen, which is left on the surface until the temperature of recombinative H 2 desorption is reached. Variable temperature studies indicate that ethyl groups are the only hydrocarbon entities on a surface up until the hydrogen elimination temperature. The positions of Si-H stretching bands suggest that a mixture of surface sites is formed at temperatures between 300 K and 600 K. However, the majority of surface hydrogen forms SiH-SiI surface species as the surface temperature reaches 700 K.

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Section: Introductionmentioning

confidence: 94%

Infrared spectroscopy studies of iodoethane on Si(100)-2×1: Adsorption and thermal decomposition leading to adsorbate ordering

Bulanin

Shah

Teplyakov

2001

The Journal of Chemical Physics

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“…20 Both theoretical and experimental studies of the adsorption of HCl on Ge͑100͒ and Si͑100͒ surfaces have been performed. [21][22][23][24] HCl molecules are suggested to dissociate upon collision with the Si͑100͒ surface. Each of the two dissociation fragments subsequently terminates one surface dangling bond ͑DB͒.…”

Section: Introductionmentioning

confidence: 99%

Determination of dissociative fragment-adsorbate interaction energy during chemisorption of the diatomic molecule HCl on Si(100)

et al. 2010

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This study investigates the surface chemistry and the ordering characteristics of coadsorbed hydrogen and chlorine atoms, generated by the exposure of the Si͑100͒ surface to gas-phase HCl molecules at various substrate temperatures, by scanning tunneling microscopy ͑STM͒, core-level photoemission spectroscopy, and Monte Carlo simulation. Experimental results show that saturation exposure to HCl causes all surface dangling bonds to be terminated by the two fragments H and Cl atoms and that the number of H-terminated sites exceeds that of Cl-terminated ones by more than 10%. This finding suggests that, in addition to the dominant dissociative chemisorption, atomically selective chemisorption or atom abstraction occurs. STM images reveal that some Cl-terminated sites form patches with a local 2 ϫ 2 structure at 110 K and that the degree of ordering is reduced as the substrate temperature increases. Results of Monte Carlo simulations demonstrate the importance of including dissociative fragment-adsorbate interactions during the random adsorption of diatomic molecules. Comparing the correlations between Cl-terminated sites identified from STM images and those predicted by simulation reveals two effective interaction energies of 8.5Ϯ 2.0 and 3.5Ϯ 2.0 meV between a dissociative fragment Cl atom and a nearest neighboring Cl adsorbates in the same dimer row and in the adjacent row, respectively.

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“…10 The geometry of Cl adsorbed on bridge sites could be the lowest energy configuration. 2 Since a SiCl 2 molecule has been found to desorb from Cl adsorbed Si surfaces, we have explored this mechanism starting from the c(4ϫ2) surface geometry of one dimer terminated with two Cl atoms as shown in Fig. 5.…”

Section: B Spontaneous Desorption or CL 2 Activated Reactionmentioning

confidence: 99%

“…1 The halogen atoms are chemically bonded to dimer dangling bonds or bonded on bridge sites. 2 The adsorbed halogens spontaneously desorb or cause etching as volatile molecules, when the surface temperature is elevated up to 600°C. [3][4][5] A flux of halogen atoms and molecules exposed to Si surfaces at elevated temperatures also yields a continuous etching of the Si surfaces.…”

Section: Introductionmentioning

confidence: 99%

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Surface structure and doping-induced etching of Si(100) by chlorine: First-principles study

Kato¹

1996

Phys. Rev. B

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Surface-structure and doping effects on Si͑100͒ surface etchings by Cl atoms and molecules have been studied based on first-principles calculations. The calculated results reveal that the desorption energy of SiCl 2 from the p(1ϫ1) geometry is in excellent agreement with the experimental result, implying that a plausible surface-structure change in Cl adsorbed surfaces at high temperatures above 600°C could trigger a spontaneous desorption. The calculated desorption energies for Cl adsorbed Si surface systems have been decreased by raising the Fermi level as observed in experiments. It is found to be mostly the effects of total energy reduction by dipole fields generated between virtual holes and ionized Cl atoms.

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Chemisorption of HCl, Cl2 and F2 on the Si(100) surface

Cited by 42 publications

References 36 publications

Infrared spectroscopy studies of iodoethane on Si(100)-2×1: Adsorption and thermal decomposition leading to adsorbate ordering

Infrared spectroscopy studies of iodoethane on Si(100)-2×1: Adsorption and thermal decomposition leading to adsorbate ordering

Determination of dissociative fragment-adsorbate interaction energy during chemisorption of the diatomic molecule HCl on Si(100)

Surface structure and doping-induced etching of Si(100) by chlorine: First-principles study

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