volume 30, issue 43, Pno-no 2010
DOI: 10.1002/chin.199943288
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Hyung S. Park,
Stephan Schulz,
Helge Wessel
et al.

Abstract: First Approach to an AlSb Layer from the Single-Source Precursors [Et 2 AlSb(SiMe 3 ) 2 ] 2 (I) and [iBu 2 AlSb(SiMe 3 ) 2 ] 2 (II). -AlSb films are grown on Si(100) and polycrystalline Al 2 O 3 from the new single-source precursors (I) and (II) using a cold-wall metal-organic CVD reactor in the absence of any carrier gas at relatively low temperatures and high-vacuum conditions. The optimal deposition temp. for AlSb using precursor (I) is in the range 375-425 • C and for (II) in the range 425-475 • C. Unfort…

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