Chemical synthesis, structural and optical properties of quantum sized semiconducting tin(II) selenide in thin film form

Pejova, Biljana; Grozdanov, Ivan

doi:10.1016/j.tsf.2006.11.016

Cited by 83 publications

(64 citation statements)

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“…Anionic selenide species have been introduced into the reactor in the form of sodium selenosulfate, prepared freshly right before the deposition process. Sodium selenosulfate solution has been prepared from elemental selenium and sodium sulfite, as described in details in our previous publications [45][46][47]. The details concerning the basic chemistry of the deposition process, as well as the mechanism of crystal growth are given further below in this manuscript.…”

Section: Methodsmentioning

confidence: 99%

Sonochemically assisted colloidal route to CdSe quantum dot assemblies: an alternative way to further fine-tune the size-dependent properties

Pejova

Bineva

2016

J Mater Sci: Mater Electron

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Continuous-wave heterogeneous sonochemical method was developed to synthesize 3D assemblies composed by QDs of metastable (cubic) modification of CdSe with sphalerite structural type. 3D QD assemblies were deposited in thin film form and as bulk precipitates. Structure, surface morphology, optical absorption as well as charge carriers' and phonon confinement effects were studied in details. The average nanocrystal radius, calculated by the Scherrer and Williamson-Hall methods, diminishes from 2.7 nm for samples synthesized by conventional colloidal chemical route to 2.0 nm for samples synthesized by sonochemical route. Upon post-deposition thermal annealing this value increases to 12.0 nm. QD size decrease is followed by increase of the uni-directional lattice strain and dislocation density (as defined by Hirsch), as well as by decrease of the lattice constant value. Previous findings were justified by analysis of X-ray diffraction peaks shape, which were found to be dominated by the particle size-distribution, instead of non-uniform strain. The energy of the fundamental direct C v 8 ! C c 6 interband electronic transition, computed from optical absorption data within parabolic approximation for the dispersion relation, shifts from 2.67 eV for sonochemically deposited samples and 2.08 eV for chemically deposited ones, to 1.77 eV upon post-deposition thermal treatment (close to the bulk value of 1.74 eV). The type of ''interband'' transitions does not change upon dimensionality reduce. Enhanced band gap energy blue shift upon average QD size decrease is followed by oscillator strength increase. Such trends were rationalized in terms of 3D confinement effects on charge carriers' motion. Experimentally observed band gap energies agree very well with the predictions of the effective mass model of Brus. The next direct interband electronic transition, from the spin-orbit split component of the valence band to the conduction band, has been detected and analyzed. The 1LO bands in the Raman spectra of chemically and sonochemically deposited samples appear at 206 and 204 cm -1 , as compared to the bulk value of 210 cm -1 . The extent of homogeneous broadening of the corresponding band is larger in sonochemically deposited samples, indicating enhanced frequency of phonon-phonon collisions in smaller QDs. The observed frequency shifts are dominated by phonon-dispersion terms, instead of lattice contraction.

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Section: Methodsmentioning

confidence: 99%

Sonochemically assisted colloidal route to CdSe quantum dot assemblies: an alternative way to further fine-tune the size-dependent properties

Pejova

Bineva

2016

J Mater Sci: Mater Electron

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“…Bindu and Nair [188] synthesized SnSe and SnSe 2 thin films using Se thin films of 80e350 nm in thickness from a chemical bath at room temperature and these films were utilized to prepare SnSe and SnSe 2 thin films. The nanocrystalline orthorhombic and photoconducting SnSe thin films were deposited by Pejova and Grozdanov [189].…”

Section: Tin Selenide (Snse)mentioning

confidence: 99%

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Pawar

Kim

et al. 2011

Current Applied Physics

325

124

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“…SnSe thin films were deposited by different methods like thermal evaporation [1,2], flash evaporation [3], hot wall epitaxy [4], reactive evaporation [5], electrodeposition [6], laser ablation [7], chemical bath deposition (CBD) [8], chemical synthesis [9,10] and electrochemical atomic layer epitaxy (ECALE) [11], to study various physical properties. The decisive requirements for the efficient performance of the devices are compositional uniformity and crystallinity.…”

Section: Introductionmentioning

confidence: 99%

Properties of pulse plated SnSe films

Ananthi¹,

Thilakavathy²,

Muthukumarasamy³

et al. 2011

J Mater Sci: Mater Electron

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In this work, the pulse electrodeposition technique has been employed for the first time to deposit SnSe films from a bath containing Analar grade 50 mM tin chloride (SnCl 4 ) and 5 mM SeO 2 . The XRD profile of SnSe thin films deposited at different duty cycles indicate the peaks corresponding to SnSe. Atomic force microscopy studies indicated that the surface roughness increased from 0.5 to 1.5 nm with duty cycle. The transmission spectra exhibited interference fringes. The value of refractive index at 780 nm was 2.1, this value decreased to 1.95 with decrease of duty cycle. The room temperature resistivity increased from 0.1 to 10 Xcm with decrease of duty cycle. Photo electrochemical cell studies were made using the films deposited at different duty cycles. For duty cycles greater than 15% photo output was observed. For a film deposited at 50% duty cycle, an open circuit voltage of 0.55 V and a short circuit current density of 5.0 mA cm -2 at 60 mW cm -2 illumination. Capacitance voltage measurements indicated V fb = 0.67 V (SCE) and p type, carrier density = 6.98 9 10 16 cm -3 .

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Chemical synthesis, structural and optical properties of quantum sized semiconducting tin(II) selenide in thin film form

Cited by 83 publications

References 50 publications

Sonochemically assisted colloidal route to CdSe quantum dot assemblies: an alternative way to further fine-tune the size-dependent properties

Sonochemically assisted colloidal route to CdSe quantum dot assemblies: an alternative way to further fine-tune the size-dependent properties

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Properties of pulse plated SnSe films

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