Chemical Solution Processing and Properties of (Bi,Nd)₄Ti₃O₁₂Ferroelectric Thin Films

Abstract

We introduce a novel variational approach for evaluating PTV image pairs and sequences in two and three dimensions. We combine a discrete non-differentiable particle matching term with a continuous regularization term. An advanced mathematical method guarantees convergence to a local minimum. The experimental evaluation shows that our variational method competes with three alternative approaches. We outline the potential of our method for further developments.

Synthesis and properties of ferroelectric Si-doped (Bi, Nd)4Ti3O12 thin films by chemical solution deposition

“…6. The reported P r value of BNT at 700 • C (about 20 μC/cm 2 ) was larger than that of BNTS at 700 • C [6,12]. However, the P r does not decrease in Sidoped BNT films, even when the crystallization temperature is lowered by 50-100 • C. This tendency is consistent with Gedoped (Bi,Nd) 4 Ti 3 O 12 thin films [8,9].…”

“…These RMS roughness values were smaller than those of undoped BNT thin films [9]. Also, the grain size of the BNTS thin films were found to be relatively small compared with those of reported undoped BNT thin films prepared by the CSD [12]. As can be seen from Fig.…”

Preparation and Properties of Bi4 ? xNdxTi3O12 Thin Films by Chemical Solution Deposition

“…The well-saturated P-E hysteresis loops with a large P r and a low E c were observed for the BNT [x = 0.75, 1.0] films. Among these films, BNT [x = 0.75] thin films showed the highest remanent polarization (P r ) of 22 µC/cm 2 and a relatively low coercive electric field (E c ) of 69 kV/cm at an applied voltage of 5 V. This large ferroelectricity of current BNT films may be attributable to the change in crystal orientation from the random orientation having 00l diffractions with high intensities to the random orientation with a strong 117 reflection, and to the tilting of TiO 8− 6 octahedra derived from the substitution of Nd 3+ which has a smaller ionic radius than those of Bi 3+ [7][8][9][10]. Uchida et al achieved the P r of 24 µC/cm 2 (E c > 100 kV/cm) for 750 • C annealed BNT films prepared by the CSD [6].…”

“…Recently, the improvement of electrical properties of BIT thin films by rare-earth ion doping has been reported by several researchers [1][2][3][4][5][6][7][8][9][10]. Among them, Bi 4−x Nd x Ti 3 O 12 (BNT) has been receiving much attention due to its larger ferroelectricity than that of the other rare-earth ion doped BIT [5][6][7][8][9][10]. Therefore, the optimization of the amount of neodymium (Nd) substitution into BIT films is strongly required for the fabrication of BNT films with excellent ferroelectricity.…”

Effect of crystallization temperature on microstructure and ferroelectric properties of (Bi,Nd)4Ti3O12 thin films prepared by chemical solution deposition

“…Substitution of various trivalent rare-earth cations (such as La 3+ , Nd 3+ , Sm 3+ , and Pr 3+ ) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics [1][2][3][4][5][6]. Among them, Nd-doped BIT ((Bi,Nd) 4 Ti 3 O 12 , BNT) has been receiving much attention due to its larger ferroelectricity than that of La-doped BIT (BLT) [7][8][9][10].…”