2020
DOI: 10.1016/j.spmi.2019.106350
|View full text |Cite
|
Sign up to set email alerts
|

Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
30
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 45 publications
(32 citation statements)
references
References 110 publications
0
30
0
Order By: Relevance
“…[79] Substitutional doping as well as chemical doping by surface adsorbants are also promising methods to modify the properties of TMDCs. [80,81] TMDCs -and other 2D materials-may be combined together to form heterostructures, either vertically or laterally. [82][83][84][85][86] Growth of a TMDC from an edge of another TMDC crystal forms a lateral (in-plane) heterostructure with ideally an atomically sharp, seamless junction (Figure 3c,d).…”
Section: The 2d Metal Dichalcogenide Familymentioning
confidence: 99%
See 1 more Smart Citation
“…[79] Substitutional doping as well as chemical doping by surface adsorbants are also promising methods to modify the properties of TMDCs. [80,81] TMDCs -and other 2D materials-may be combined together to form heterostructures, either vertically or laterally. [82][83][84][85][86] Growth of a TMDC from an edge of another TMDC crystal forms a lateral (in-plane) heterostructure with ideally an atomically sharp, seamless junction (Figure 3c,d).…”
Section: The 2d Metal Dichalcogenide Familymentioning
confidence: 99%
“…[ 79 ] Substitutional doping as well as chemical doping by surface adsorbants are also promising methods to modify the properties of TMDCs. [ 80,81 ]…”
Section: The 2d Metal Dichalcogenide Familymentioning
confidence: 99%
“…[82,87,88] These are normally restricted to chemical elements of groups IVB (Ti, Zr, and Hf), group VB (V, Nb, and Ta), and group VIB (Mo, and W), group VIIB (Tc and Re), group X referred as noble transition metals (Pt and Pd), and chalcogens (S, Se, and Te); varies their behavior from semiconductor to superconductors for example semiconductor group contains MoS 2 and WS 2 , in the class of semimetals WTe 2 and TiSe 2 are potential candidates, but VSe 2 and NbS 2 are considered as true metals in TMDCs, NbSe 2 , and TaS 2 are able of donating superconductivity near low temperatures (0.8 K) (see Figure 3b). [17,38,[89][90][91][92][93][94][95][96] TMDCs parade exclusive tunable optical and physical properties evolve from quantum size effect, surface defects, and their nanosized thickness. For example, bulks semiconducting TMDCs of 1T phase exhibit an indirect bandgap, but in case of monolayer, they exhibit direct optical and electronic bandgap, resulting in enhanced photoluminescence (PL).…”
Section: Structural Chemistry Of Tmdcsmentioning
confidence: 99%
“…Under given conditions, whether a reaction can occur or not is predicted according to the change of Gibbs free energy for the reaction. The change of Gibbs free energy DG for reaction (10) can be calculated in terms of the following equation: (12) and ( 13):…”
Section: Molar Fraction Of O-doping Atom In the Cvd-grown 2d Mosmentioning
confidence: 99%
“…[5][6][7][8] Due to the direct bandgap in monolayer forms, TMDs exhibit great opportunities for the preparation of optoelectronic devices. [9][10][11] Moreover, the properties of TMDs can be improved by chemical doping, 12 surface plasmonic enhancement, 13 defect engineering, 14 surface nano-rugging, 15 vertical growth, 16 heterojunctions 17 and so on.…”
Section: Introductionmentioning
confidence: 99%