Charge Transport Studies in Pure and CdS Doped PBDTTPD:CdS Nanocomposite for Solar Cell Application

Mohanty, Dibyajyoti; Bharti, Vishal; Gaur, Jitender; Bhardwaj, Ramil; Sharma, G. D.; Chand, Suresh

doi:10.1007/978-3-319-03002-9_81

Cited by 6 publications

(7 citation statements)

References 10 publications

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“…The new peaks in the XRD pattern of Sn-P A1 composite show resemblance with that of the SnS and SnS 2 . This indicates the ligation of DTC groups present in the P A1 with the Sn [28][29][30].…”

Section: Resultsmentioning

confidence: 93%

“…Also the dithiocarbamates and related molecules such as xanthates are known to produce metal sulfide nanoparticles in various morphologies such as rods, belts, spherical particles, etc. via thermal decomposition under specific reaction conditions [22][23][24][25][26][27][28]. Herein we present a simple and efficient green process for extraction of tin from aqueous medium using a DTC-based polymer P A1 and recovery of tin as tin sulfide nanoparticles via thermal decomposition of the Sn-P A1 extract.…”

Section: Introductionmentioning

confidence: 99%

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Tin Sulfide Nanoparticle Synthesis from Waste Waters

Gaur¹,

Jain²,

Chand³

et al. 2014

AJAC

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Tin and its derivatives are extensively used in modern technology tools which lead requirement for development of green methods for its waste management and profitable recycling. Presence of tin in water bodies causes enormous environmental concern due to its acute toxicity to living beings. We demonstrate a simple and zero emission process for extraction of tin ions from aqueous solution using dithiocarbamate-based copolymer and its single step quantitative recovery and transformation into SnS nanoparticles. The polymer shows high metal extraction capacity, 1.06 g SnCl 2 per gram of polymer. The polymer metal composite and SnS nanoparticles are analyzed using TEM, FTIR, XRD spectroscopy techniques. The FTIR shows formation of Sn-S bonding in the polymer metal composite. This study has implication for cost effective and green approach for purification of water and waste management.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Tin Sulfide Nanoparticle Synthesis from Waste Waters

Gaur¹,

Jain²,

Chand³

et al. 2014

AJAC

Self Cite

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“…Figure 4(a) presents logarithmic current density-voltage (J-V ) plots created based on measurements of the samples containing different Te concentrations at 298 K. Three distinct regions can be observed in the J-V curves, and the J-V characteristics are best explained by an analytical model based on trap-controlled SCLC. [19][20][21][22] In the first region at low applied voltage, J increases linearly with voltage (J∝V ). In the second region at intermediate applied voltage, SCLC with discrete deep traps is observed (J∝V 2 ).…”

mentioning

confidence: 99%

“…In the second region at intermediate applied voltage, SCLC with discrete deep traps is observed (J∝V 2 ). 20) The presence of traps causes the current to be relatively low, and quadratic field dependence is maintained only for the discrete deep trap level. 19) In the third region at high applied voltage, the J increases non-linearly, with slope >2 (J∝V l+1 ).…”

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confidence: 99%

Trap-controlled space-charge-limited conduction in amorphous As _x Te_1−x thin films with ovonic threshold switching

Kim

Lee

Kim

et al. 2020

Appl. Phys. Express

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Ovonic threshold switching (OTS) in chalcogenide materials has attracted considerable interest for application in electronic devices to suppress leakage current in cross-point array structures. Although OTS appears to originate from an electronic process, the exact mechanism of OTS remains unclear with respect to sub-threshold conduction and threshold switching. In this study, we demonstrated that the sub-threshold conduction characteristics is affected by the structures of the exponentially distributed trap states in amorphous chalcogenide materials. Using binary AsxTe1−x thin films, we investigated the effects of trap distribution on OTS characteristics, analyzed the band structures, and developed a trap-controlled space-charge-limited conduction model.

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“…By further increasing the applied voltage, the memory switches toward the metallic state. [24][25][26][27][28][29][30][31] The double-logarithmic I-V plots of the GeTe memristor are shown in Figure 4a and show three clearly delimited regions in the high resistive state. Current to voltage dependencies are I ∝ V 1.4 , I ∝ V 2.1 , and I ∝ V 3.1 , respectively, after sweeping at 3 V. As the sweeping voltage increases, the exponents are starting to decrease.…”

mentioning

confidence: 99%

Multilevel Memristive GeTe Devices

Velea

Dumitru

Sava

et al. 2020

Physica Rapid Research Ltrs

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Phase‐change memories have reached an advanced degree of maturity, although, to be able to meet the increasing storage demand, multilevel capability is needed. A GeTe memristor is obtained in an amorphous state and it is subjected to a specific thermal treatment which initiates the transition toward the crystalline state. It is found that this crystalline state initialization process is highly beneficial for subsequently obtaining a large number of intermediate resistive states between the high and low resistive states. Multiple resistance levels are achieved by operating the devices in both DC sweeps and rectangular pulse modes in the low‐voltage subthreshold regime. The conduction is modeled using a space charge limited conduction model, showing three distinct conduction regions in the high resistive state which merge toward a single conduction region as the low resistive state is approached. The obtained memristors can be used as multilevel nonvolatile memories or as synapses in neuromorphic computing.

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Charge Transport Studies in Pure and CdS Doped PBDTTPD:CdS Nanocomposite for Solar Cell Application

Cited by 6 publications

References 10 publications

Tin Sulfide Nanoparticle Synthesis from Waste Waters

Tin Sulfide Nanoparticle Synthesis from Waste Waters

Trap-controlled space-charge-limited conduction in amorphous As _x Te_1−x thin films with ovonic threshold switching

Multilevel Memristive GeTe Devices

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Charge Transport Studies in Pure and CdS Doped PBDTTPD:CdS Nanocomposite for Solar Cell Application

Cited by 6 publications

References 10 publications

Tin Sulfide Nanoparticle Synthesis from Waste Waters

Tin Sulfide Nanoparticle Synthesis from Waste Waters

Trap-controlled space-charge-limited conduction in amorphous As x Te1−x thin films with ovonic threshold switching

Multilevel Memristive GeTe Devices

Contact Info

Product

Resources

About

Trap-controlled space-charge-limited conduction in amorphous As _x Te_1−x thin films with ovonic threshold switching