Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

Abstract

To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V ṁ s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 keV) for an un-collimated 241Am @ 59.54 keV isotope.

Solution-Grown Formamidinium Hybrid Perovskite (FAPbBr3) Single Crystals for α-Particle and γ-Ray Detection at Room Temperature

“…The mean depth of the incident α-particles in FPB was calculated using SRIM to be 29.1 μm (Figure S6), which was much smaller than the FPB sample thickness. Therefore, only a single polarity of carriers participated in the transport process, depending on the bias polarity of the irradiated electrode. − …”

Improved Crystallization Quality of FAPbBr3 Single Crystals by a Seeded Solution Method

“…A 5.49 MeV 241 Am α particle source was employed to evaluate the radiation detection performance of FPB-SSM SCs. Because the mean penetrating depth of 5.49 MeV α particles in FPB is ∼29.2 μm (≪1 mm, seen in Figure S10), only hole carriers participated in the transport process when the α particles are incident from the anode electrode. ,, Figure S11 shows the α particle pulse height spectra of the AZO/FPB-4/Au detector as a function of biases with resolved full-energy peaks. The full-energy peaks are observed clearly with an energy resolution of 21.4% at a bias voltage of 60 V at room temperature (Figure b).…”

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

“…The resistivity temperature dependence of the CZT:In crystal is described by an exponential dependence with the activation energy, ∆E. Analyzing the dark dependence of the CZT:In resistivity on temperature, one can obtain important information about the temperature dependence of the Fermi-level position in the band-gap, as well as about the nature of the impurity, which determines the electrical conductivity [20]. To estimate the energy-level compensation degree that defines the dark conductivity, suppose that the Fermi-level position and the conductivity of the material are determined by a donor with energy, E d , and concentration of N d , and the concentration of compensating acceptors is denoted as N а .…”