volume 106, issue 1, P63-71 1981
DOI: 10.1002/pssb.2221060107
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Abstract: Lateral super-lattices along the surface of a semiconductor can generate mini-band structure for distances of the order of 1000 A or less. The detailed gap structure depends noticeably on the charge in the structure. Under conditions of strong population inversion, synergetic switching behavior and space-charge waves can be expected to occur.Ein laterales ubergitter an der Oberfliiche eines Halbleiters kann eine Mini-Bandstruktur fur Abstiinde der GroBenordnung 1000 A oder kleiner erzeugen. Die genaue Gap-Str…

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