2020
DOI: 10.1039/c9tc05695e
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Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices

Abstract: The phenomenon of charge carrier traps in organic semiconductors and their impact on electronic devices are reviewed.

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Cited by 435 publications
(487 citation statements)
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References 277 publications
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“…Organicd yes have ah igh tendency to aggregate due to their flat structure and large polarizability.T he close dye-dye proximity give rise to strong interchromophore interactions resulting in new and often unwanted effects such as H-and J-aggregates, [1] excimers, [2] charget ransfer states, [3] andt raps for charges. [4] In materials chemistry,m olecules ability to aggregate plays ac rucial role and ac onsiderable effort has therefore been dedicated to engineering the morphology of organic thin films. [5] Self-assembly of chromophores is highly dependent on interactions between the single molecules, especially p-p interactions between the chromophorec ores p-unit.…”
mentioning
confidence: 99%
“…Organicd yes have ah igh tendency to aggregate due to their flat structure and large polarizability.T he close dye-dye proximity give rise to strong interchromophore interactions resulting in new and often unwanted effects such as H-and J-aggregates, [1] excimers, [2] charget ransfer states, [3] andt raps for charges. [4] In materials chemistry,m olecules ability to aggregate plays ac rucial role and ac onsiderable effort has therefore been dedicated to engineering the morphology of organic thin films. [5] Self-assembly of chromophores is highly dependent on interactions between the single molecules, especially p-p interactions between the chromophorec ores p-unit.…”
mentioning
confidence: 99%
“…The subthreshold swing (SS) is often a reflection of the existence of a trap state, and R C at the interfacial region between the electrode and active layer or active layer and gate dielectrics. [ 56 ] When preparing all OFET devices in this study, alkyl self‐assembled monolayers (octadecyltrichlorosilane) were applied to minimize charge trapping on the gate dielectric surface, [ 57,58 ] and the polymer active layers were spin coated on the gate dielectrics, so the main interfacial region affecting the SS can likely originated from the R C due to the electrode‐active layer interface rather than the charge trap state at the active layer‐dielectric interface. Lower SS values are important for optimizing and further manipulating OFET performance in practical applications.…”
Section: Resultsmentioning
confidence: 99%
“…DOS analysis was performed following Grunewald's method and using the transfer characteristics of the devices obtained under different humidity levels (Figure S5, Supporting Information). [ 45 ] The DOS as a function of energy from the valence band edge are obtained.…”
Section: Methodsmentioning
confidence: 99%