Characterization of ZnO–In2O3 transparent conducting films by pulsed laser deposition

Mikawa, Michio; Moriga, Toshihiro; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei‐ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo

doi:10.1016/j.materresbull.2005.02.019

Cited by 20 publications

(8 citation statements)

References 11 publications

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“…The In-doped ZnO films showed over 80% optical transmissions in the visible range and the optical transmissions of doped samples were higher than that of un-doped samples. Taking the lattice constant c and the FWHM of the ZnO (0 0 2) peak of the samples into account, we supposed that the absorption edge shrinkage is due to many body effects [16,17].…”

Section: Structural Propertiesmentioning

confidence: 99%

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

Zang

et al. 2008

Journal of Luminescence

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Section: Structural Propertiesmentioning

confidence: 99%

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

Zang

et al. 2008

Journal of Luminescence

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“…Due to their optical and electrical properties, TCOs are used for photovoltaic solar cells, phototransistors, liquid crystal display, optical heaters, gas sensors, transparent electrodes and other optoelectronic devices [1]. Of these TCOs, zinc oxide (ZnO) has attracted most attention for various applications such as solar cells, transparent conducting films, chemical sensors, varistors, light-emitting diodes, UV photo detectors, laser diodes [2][3][4][5], gas sensors [6,7].…”

Section: Introductionmentioning

confidence: 99%

Influence of films thickness and structure on the photo-response of ZnO films

Yıldırım

Ateş

2010

Optics Communications

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“…This peak is not assigned until now, but the same peak was observed for In-Zn-O system under the film deposition of 380 • C [12]. This peak is close to (222) In 2 O 3 or homologous crystalline peak such as (008) of Zn 2 In 2 O 5 and (0015) of Zn 3 In 2 O 8 [13]. In Fig.…”

Section: Resultsmentioning

confidence: 59%

Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method

Tominaga

Tsuzuki

Maruyama

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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Transparent conductive oxide (TCO) films of In-Ga-Zn-O were deposited by sputtering, for applications involving shorter wavelengths than visible light wavelengths. The films were deposited on fused quartz at a substrate temperature of 250 • C by pulsed laser deposition (PLD) using a pulsed KrF excimer laser (λ = 248 nm). The targets were synthesized by mixing In2O3-Ga2O3-6ZnO powders and Ga2O3+3ZnO powders. Weight % of the mixed Ga2O3+3ZnO powders was estimated by x, where x was changed from 0 to 0.2 in order to increase the fraction of Ga atoms in the film. Near the stoichiometric composition of In, Ga and Zn, we obtained low resistivity films and high carrier mobility. All the films deposited were amorphous. The optical bandgap energy was increased with increasing Ga content. With appropriate incorporation of extra Ga in the target, we could deposit stoichiometric In-Ga-Zn-O amorphous films. We obtained the lowest resistivity of 3 × 10 −3 Ωcm and a high Hall mobility of 20-25 cm 2 /Vs. The carrier concentration was 1 × 10 20 cm −3. The optical band gap energy was changed from 3.91 to 4.06 eV with increasing x value from 0 to 20 wt%. It was confirmed that the slight deviation from the stoichiometric composition did not influence the electrical properties. Even for a thickness of 50-80 nm, the film properties were the same as those of much thicker films. The present films are very homogeneous and the surface is very flat, due to the fact that the films are amorphous.

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Characterization of ZnO–In2O3 transparent conducting films by pulsed laser deposition

Cited by 20 publications

References 11 publications

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

Influence of films thickness and structure on the photo-response of ZnO films

Properties of Amorphous Transparent Conductive In-Ga-Zn Oxide Films Deposited on Fused Quartz by the PLD Method

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