Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

Kang, Young Min; Chung, Choong‐Heui; Oh, Sang Hyun; Yang, Bee Lyong; Lee, Seaung Suk; Hong, Suk-Kyoung; Kang, Nam Soo

doi:10.1143/jjap.41.694

Cited by 5 publications

(3 citation statements)

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“…We investigated whether the ferroelectric polarization value of YCrO 3 thin films was suitable for memory devices, which require films with a ferroelectric polarization switching speed of about 200 ns such as SrBi 2 Ta 2 O 9 thin films [18]. To apply the ferroelectric capacitor for memory, we measured the ferroelectric polarization switching speed.…”

Section: Resultsmentioning

confidence: 99%

Multiferroic properties of YCrO3 thin films on glass substrate

Seo

Ahn

Son

2015

Ceramics International

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Section: Resultsmentioning

confidence: 99%

Multiferroic properties of YCrO3 thin films on glass substrate

Seo

Ahn

Son

2015

Ceramics International

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“…Ferroelectric perovskite thin films have been widely studied in recent years for their possible applications in microelectromechanical systems (MEMS), 1) nonvolatile random access memory (FeRAM), 2) and high-performance thermo-sensors. 3) For these advanced applications, many parameters such as microstructure, orientation, and residual stress must be controlled because these parameters determine the electrical properties in a ferroelectric thin film.…”

Section: Introductionmentioning

confidence: 99%

Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films

Ohno

Yanagida

Suzuki

et al. 2014

J. Ceram. Soc. Japan

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The precursor solution for lanthanum strontium cobalt oxide (LSCO) was modified to increase the single-layer film thickness. Results show that LSCO with 170 nm thickness was deposited on a Si wafer for stress engineering of a ferroelectric thin film. The single-layer film thickness for LSCO layer increased concomitantly with increasing viscosity in LSCO precursor solution. In addition, the crystallinity and the electrical resistivity of a LSCO with lanthanum nickel oxide (LNO) seeding layers using the modified LSCO precursor solution was nearly equal to that of the reported LSCO precursor solution. The residual stress in lead zirconate titanate with Zr/Ti = 53/47 composition thin film on a LSCO(170 nm)/LNO(160 nm)/Si stacking structure was ¹0.9 GPa compressive stress, which enhances the ferroelectric property (2P r = 120¯C/cm 2 ).

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“…Ferroelectric thin films are very promising for use in electronic devices such as capacitors, 1,2) memories, 3) sensors, 4) and actuators [5][6][7][8] because of their excellent electrical properties. In addition, it is well known that the change in the electrical properties of ferroelectric thin films depend on many factors, such as microstructure, 9) crystal orientation, 10) crystal size, 11,12) and residual stress.…”

Section: Introductionmentioning

confidence: 99%

Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure

Ohno

Ishiduka

Arai

et al. 2012

Jpn. J. Appl. Phys.

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This paper shows the electrical properties of ferroelectric thin films with large compressive residual stress. In this study, the large compressive strain was applied to lead zirconate titanate (PZT) thin films by designing the bottom electrode structure on a Si wafer. The materials selected for the bottom electrode were lanthanum nickel oxide (LNO) and lanthanum strontium cobalt oxide [LSCO; (La0.5Sr0.5)CoO3] from the viewpoint of thermal expansion coefficients. As a result, the PZT thin films with morphotropic phase boundary (MPB) composition received compressive residual stress up to approximately 0.8 GPa from the bottom electrode even on a Si wafer. The compressive residual stress concomitantly increased with increasing LSCO layer thickness. In addition, the remanent polarization of the PZT thin films increased with increasing compressive residual stress.

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Characterization of Polarization Switching Behavior of Pt/SrBi₂Ta₂O₉/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

Cited by 5 publications

References 0 publications

Multiferroic properties of YCrO3 thin films on glass substrate

Multiferroic properties of YCrO3 thin films on glass substrate

Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films

Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure

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