Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications

Hur, Sung-Gi; Kim, Eui‐Tae; Lee, Jihong; Kim, Geun-Hong; Yoon, Soon‐Gil

doi:10.1116/1.2945301

Cited by 43 publications

(17 citation statements)

References 12 publications

(3 reference statements)

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“…These properties make it a very desirable window layer for many heterojunction thin film solar cells, such as those based on Cu 2 S [ 2 ], CdTe [ 3 ], CuInSe 2 [ 4 ]. This promising material is also applied in a wide variety of other fields, such as light emitting diodes [ 5 ], photonic devices [ 6 , 7 , 8 ], photoconductive sensors [ 9 ] and environmental pollution control [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

et al. 2017

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Nanocrystalline CdS thin films were grown on glass substrates by a thermal evaporation method in a vacuum of about 2 × 10−5 Torr at substrate temperatures ranging between 25 °C and 250 °C. The physical properties of the layers were analyzed by transmittance spectra, XRD, SEM, and four-point probe measurements, and exhibited strong dependence on substrate temperature. The XRD patterns of the films indicated the presence of single-phase hexagonal CdS with (002) orientation. The structural parameters of CdS thin films (namely crystallite size, number of grains per unit area, dislocation density and the strain of the deposited films) were also calculated. The resistivity of the as-deposited films were found to vary in the range 3.11–2.2 × 104 Ω·cm, depending on the substrate temperature. The low resistivity with reasonable transmittance suggest that this is a reliable way to fine-tune the functional properties of CdS films according to the specific application.

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Section: Introductionmentioning

confidence: 99%

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

et al. 2017

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“…[6][7][8][9] Metal dichalcogenides provide promising materials for wide range of applications in areas like field effect devices, 10,11 memory devices, 12 and energy storage. 13,14 Among this class of materials, SnS 2 , a semiconductor with a band gap of 2.1 eV, was recently shown to exhibit a high FET on/off ratio of $10 6 , 15 a feature much desirable for the next generation electronic devices. 16 Moreover, selenium doping in SnS 2 offers a useful route for bandgap engineering, in that the band gap of SnS 2Àx Se x can be continuously tuned from 2.1 eV (SnS 2 ) to 1.0 eV (SnSe 2 ) by varying the selenium content.…”

mentioning

confidence: 99%

Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

Pan

Manongdo

et al. 2013

Applied Physics Letters

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A thorough characterization of field effect transistors with conduction channels made of SnS2−xSex nanocrystals having different selenium content is presented. The main effect of increasing the selenium content is a suppression of the drain-source current modulation by the gate voltage. The temperature dependence of SnS2−xSex conductivity for all compositions is characterized by an activation energy that gradually decreases with x. A simple donor model, with parameters of SnS2 and SnSe2 deduced from density functional theory, suggests that the change in the activation energy is mostly due to enhanced dielectric constants that accompany the band gap reduction in SnS2−xSex.

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“…They are extensively used in optoelectronic devices because they tune emission in the visible region of the electromagnetic spectrum by the change in particle size. CdS thin films are also useful in the fabrication of thin film transistors, light detectors, solar cells [9][10][11]. Fundamental properties of a semiconducting material, such as optical, electrical and magnetic can be tailored by controlling the size, structure and surface states of nanocrystalline materials.…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Derived Cds Nanocrystalline Thin Films: Optical and Photoconduction Properties

Khan

Munirah

Aziz

et al. 2018

Materials Science-Poland

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High-quality CdS nanocrystalline thin films were grown by sol-gel spin coating method at different solution temperatures on glass substrates. As-deposited films exhibited nanocrystalline phase with hexagonal wurtzite structure and showed good adhesion and smooth surface morphology. It was clearly observed that the crystallinity of the thin films improved with the increase in solution temperature. Crystallites sizes of the films also increased and were found to be in the range of 10 mm to 17 nm. The influence of the growth mechanism on the band and sub-band gap absorption of the films was investigated using UV-Vis and photothermal deflection spectroscopy (PDS). The band gap values were calculated in the range of 2.52 eV to 2.75 eV. The band gap decreased up to 9 % with the increase in solution temperature from 45 °C to 75 °C. Absorption coefficients estimated by PDS signal showed the significant absorption in low photon energy region of 1.5 eV to 2.0 eV. The dark and illuminated I-V characteristics revealed that the films were highly photosensitive. The results demonstrated the potential applications of sol-gel grown CdS nanocrystalline thin films as photoconductors and optical switches.

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Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications

Cited by 43 publications

References 12 publications

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

Field effect transistors with layered two-dimensional SnS2−xSex conduction channels: Effects of selenium substitution

Sol-Gel Derived Cds Nanocrystalline Thin Films: Optical and Photoconduction Properties

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