Characterization of interface deep levels in As vapor grown EPI-GaAs

Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

“…It is considered in [8,9] that the trap TAV appearance in the epitaxial structures relates to centers at the internal epilayer-substrate boundary (internal surface). The monocrystal TAV is caused by the defects at the external surface.…”

“…) have been determined before and after the microwave treatment. The method of acoustoelectric tran-SQO, 6(4), 2003 sient spectroscopy is used [8,9]: the GaAs samples are placed by the epitaxial layer on the piezoelectric plate ( 3 LiNbO see Fig.1); during propagation of acoustic waves in the plate, the direct transverse acoustoelectric voltage (TAV) arose in semiconductor samples. After an ultrasonic impulse ending, TAV decreased to zero.…”

Defect engineering using microwave processing in SiC and GaAs

“…The parameters of defects, such as the capture cross section of electron σ n and the energy level with respect to the conductivity band bottom (E c − E t ) were determined both before and after MWT. For this purpose, we used acoustoelectric transient spectroscopy [28][29][30][31]. The principle of this spectroscopy closely coincides with the idea of the DLTS technique [32], but the barrier formation is not required, and defects at the epi-structure interface can be detected [28][29][30].…”

Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy

“…13,14 When the AE in semiconductor structures has been shown to be an effective tool for the characterization of electrical properties and experimental study of semiconductors, the AE interactions were utilized to carrier transport properties characterization including the conductivity and carrier mobility measurement and later to the interface state determination. [15][16][17] Consequently, two basic modifications of acoustoelectric (acoustic) deep-level transient spectroscopy (A-DLTS) were introduced. The former SAW technique uses a nonlinear AE interaction between the SAW electric field and free carriers in an interface region, which generates a transverse acoustoelectric signal (TAS) across the structure.…”

“…Both the dc part of the TAS, called transversal acoustoelectric voltage and hf parts of the TAS have been used to study interface traps. [17][18][19] The latter longitudinal acoustic wave (LAW) technique uses an acoustoelectric response signal (ARS) observed at the interface of the semiconductor structure when a longitudinal acoustic wave propagates through the structure. 20,21 The LAW, following the pressure modulation of the charge at the semiconductor structure interface, evokes the change of the potential difference that manifests as an ARS.…”