Characterization of interconnect interfacial adhesion by cross-sectional nanoindentation

Scherban, T.; Pantuso, D.; Sun, B.; El-Mansy, Safaa; Xu, Jessica; Elizalde, María; Sánchez, J.M.; Martı́nez-Esnaola, J.M.

doi:10.1023/a:1024931913643

Cited by 21 publications

(8 citation statements)

References 10 publications

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“…It is also important to understand delamination and cracking mechanisms as they are often incorporated with adhesion 30 testing. (Sanchez, 1999;Scherban, 2003, Chen, 2011Lu, 2011;Gerberich, 2011, Roshangias, 2015…”

Section: Mechanical Characterization Methods For Thin Films and Intermentioning

confidence: 99%

“…Practical work of adhesion can be evaluated from the nanoindentation-induced blister (NIB) test (Gerberich, 2006;Chen, 2011) where a mechanically stable crack is introduced to the interface by nanoindentation and characterized from the top by electron microscopy. A more detailed side view of the interfacial characteristics can be obtained using cross-sectional nanoindentation developed by Sanchez et al (Sanchez, 1999;Scherban, 2003;Zheng, 2005;Roshangias, 2015).…”

Section: Loading To the Top Of The Film-substrate Interfacementioning

confidence: 99%

See 1 more Smart Citation

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Lyytinen

Liu

Ylivaara

et al. 2015

Wear

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Section: Mechanical Characterization Methods For Thin Films and Intermentioning

confidence: 99%

Section: Loading To the Top Of The Film-substrate Interfacementioning

confidence: 99%

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Lyytinen

Liu

Ylivaara

et al. 2015

Wear

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“…However, tape testing is a qualitative measurement and a passing result is typically viewed as insufficient evidence for eventual success in a fully integrated interconnect. 196,197 More stringent and quantitative adhesive / interfacial toughness measurement techniques have been developed such as nanoindentation, 197,198 superlayer/buckle, [189][190][191][192] and scratch testing. 199,200 However, the predominate test utilized in the low-k/Cu interconnect community has been four point bend (4 pb) testing.…”

Section: -122mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…Based on the linear elastic fracture mechanics and plate theory, the interfacial critical energy release rate was calculated [55,56]. CSN was often used for identifying the weakest interface in multilayer structures and for characterizing interfacial adhesion [13,[56][57][58]. Compared with conventional testing methods, CSN presents some advantages.…”

Section: Interfacial Failure Induced By Substrate Crackingmentioning

confidence: 99%

Deformation, failure and removal mechanisms of thin film structures in abrasive machining

Kang¹,

Huang²

2017

Adv. Manuf.

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Thin film structures are becoming increasingly more important for industrial applications such as the making of solar panels, microelectronic devices and micro systems. However, the challenges encountered in the machining of thin film structures have been a bottleneck that impedes further wide spread uses of such structures. The development of material removal processes that are capable of producing a damage free surface at high removal rates is critical for cost effective production. Such development relies highly on a comprehensive understanding of the deformation, failure and removal mechanisms of thin film structures involved in mechanical loading. In this paper, the current understanding of the deformation characteristics of thin film systems was reviewed to provide important insights into the interfacial failure under mechanical loading, with focuses on the interfacial failure mechanisms and existing problems in the machining of thin film structures. The key characterization techniques were outlined. In particular, the recent progress in the abrasive machining of a thin film multilayer structure was summarized. The potential research directions were also presented in the end of the review.

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Characterization of interconnect interfacial adhesion by cross-sectional nanoindentation

Cited by 21 publications

References 10 publications

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Deformation, failure and removal mechanisms of thin film structures in abrasive machining

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