Characterization of defects in copper antimony disulfide

Abstract

Copper antimony disulfide (CuSbS2) has several excellent bulk optoelectronic properties for photovoltaic absorber applications. Here, we report on the defect properties in CuSbS2 thin film materials and photovoltaic devices studied using several experimental methods supported by theoretical calculations.

High open‐circuit voltage CuSbS2 solar cells achieved through the formation of epitaxial growth of CdS/CuSbS2 hetero‐interface by post‐annealing treatment

“…Besides, the PL spectra of all three samples comprised two different peaks, located at approximately 1.25 and 1.35 eV, which present a slightly red shift compared with the published theoretical simulation and experimental result of 1.5 eV. It has been reported that there are acceptor defects of Cu Sb anti‐site and V S (sulfur vacancy) located at 0.25 and 0.15 eV, respectively, above the CuSbS 2 valance band maximum which is consistent with the difference between our result and the literature report . Therefore, we speculate these kinds of shallow defects cause red‐shifted peaks.…”

Simulation studies on photovoltaic response of ultrathin CuSb(S/Se) 2 ternary compound semiconductors absorber‐based single junction solar cells

“…The defects in CuSb(S/Se) 2 system acts as trap for electron and hole charge carriers. The capture cross‐section area for electron and holes are considered 2 × 10 −12 cm −2 in this simulation, which is in good agreement with the experimentally observed results . The impact of the bulk defect density and the interface defect density are summarized in Figure 6A,B, respectively.…”

“…Other acceptor defects in CuSb(S/Se) 2 may appear because of antisite defects, where Cu is present at Sb site (Cu Sb ). These defect levels are approximately 0.1 to 0.2 eV deep above valence band . The donor defects introduced by the interstitial Copper (Cu i ) in the CuSb(S/Se) 2 are shallow and close to the conduction band minima.…”

“…These defect levels are approximately 0.1 to 0.2 eV deep above valence band. 28 The donor defects introduced by the interstitial Copper (Cu i ) in the CuSb(S/ Se) 2 are shallow and close to the conduction band minima. The presence of S/Se vacancies in the CuSb(S/Se) 2 are rather deep and serve as donor defects with defect level approximately 0.2 eV above valence band.…”

“…The capture cross-section area for electron and holes are considered 2 × 10 −12 cm −2 in this simulation, which is in good agreement with the experimentally observed results. 28 The impact of the bulk defect density and the interface defect density are summarized in Figure 6A,B, respectively. We observed that the device efficiency remains relatively insensitive to such defects as long as the concentrations of bulk and interface defects remain lower and the maximum up to 1 × 10 12 and 1 × 10 10 cm −3 , respectively.…”