Characterization of dark current non-uniformities in charge-coupled devices

Spiegel, Jan Van der; Declerck, G.

doi:10.1016/0038-1101(84)90106-0

Cited by 16 publications

(3 citation statements)

References 39 publications

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“…Because for a CCD used in the multi-pinned phase (MPP) mode, the surface dark current generated at the 2 …”

Section: Modelmentioning

confidence: 99%

“…Taking into account that (a) the merit factor of these photo-sensors is equal to the ratio of the photo-and dark current, (b) the photo-currents corresponding to some astronomic sources could be very weak, (c) the existence of some important differences between the emission parameters of the different pixels could influence the image of weak sources, (d) the existence of some experimental studies of the dark currents non-uniformity in CCDs [2], our study was focused on the: (i) numerical analysis of the experimental data concerning the dark currents corresponding to different pixels, (ii) explanation of the basic features of the statistical (for very large numbers of different pixels) distribution of the dark current values at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Study of the temperature dependence of the dark currents non-uniformity for some video-camera chips

Widenhorn

Bodegom

Iordache

et al. 2009

2009 International Semiconductor Conference

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In order to explain the experimentally found nonuniformity of the dark currents corresponding to different pixels of a video-camera chip, there were accomplished: a) a numerical study of the temperature dependence of the dark currents, in order to find the most convenient theoretical model which can describe sufficiently accurate the experimental data, b) the evaluation of the basic parameters of the studied pixels, corresponding to the chosen theoretical model, c) the study of the correlation between these parameters and their implications on the temperature dependence of the dark currents nonuniformity for different pixels of the studied chip.

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“…Because for a CCD used in the multi-pinned phase (MPP) mode, the surface dark current generated at the 2 …”

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the temperature dependence of the dark currents non-uniformity for some video-camera chips

Widenhorn

Bodegom

Iordache

et al. 2009

2009 International Semiconductor Conference

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“…the pre-(exponential) factor of the diffusion dark current being: Deo,diff -x N a , (6) where D,, is the diffusivity of electrons, from the Fick's law: J,.l -D, VIz, (7) Na is the concentration of acceptor impurities (in our case -boron), while the characteristic length -c = inf(xff , Ln ) is the least between the diffusion length of free electrons L,, and the size xff of the field-free region of CCD.…”

Section: Experimental Partmentioning

confidence: 99%

Interpreting fitting parameters of temperature dependence of dark currents in some CCDs

Bodegom

Widenhorn

lordache³

CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005.

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Abstract-The experimental r-esuilts concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed It was found that the utsed theoretical model allows: (J) the evalutation of the lowest lim?7it Of ex-perimental errors (involving the svstematic ones), (ii) the stutdy of Meyer-Neldel relations, poinlting ouit the high correlation of diffusion dar-k cuirrents with the energy gap Eg. unlike the corresponding weak correlation of depletion dark currents. (iii) raither accuircate assignments of the obtained vailutes of deep-level traps energies to some specific im?puri-ities.

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Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

Tillack¹,

Möck²,

Banisch³

et al. 1986

phys. stat. sol. (a)

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Unseeded and seeded crystallization of thick polycrystalline silicon (up to 10 μm) on SiO2 is carried out in a zone melting process using irradiation with a halogen lamp working in the scanning mode. Recrystallization without crystallization seed results in large monocrystalline areas (up to several millimeters wide and about 10 mm long). The seeded solidification produces monocrystalline silicon (100) oriented. The results indicate as well the influence of thermal conditions and impurity distribution as the interface kinetics on the feature and crystalline quality of the recrystallized film.

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Characterization of dark current non-uniformities in charge-coupled devices

Cited by 16 publications

References 39 publications

Study of the temperature dependence of the dark currents non-uniformity for some video-camera chips

Study of the temperature dependence of the dark currents non-uniformity for some video-camera chips

Interpreting fitting parameters of temperature dependence of dark currents in some CCDs

Thick monocrystalline silicon on oxidized silicon wafers produced by a zone melting process using a scanning halogen lamp

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