Characterization of Cu chemical mechanical polishing by electrochemical investigations

Colloid aspects of chemical–mechanical planarization

“…For example, slurries used for planarizing Cu films contain H 2 O 2 as an oxidizer, an amino acid (such as glycine) acting as a chelating or complexing agent, an inhibitor to passivate the film and control the dissolution, a surfactant, a pH controlling agent, etc., as well as typically 50-200 nm sized abrasives [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. While silica and alumina particles are commonly used for polishing copper and tungsten, silica and ceria are used to polish SiO 2 , poly-Si, Si 3 N 4 and perhaps low-k films [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Recently, composite abrasives in which core particles are coated or covered by a material of a different chemical composition, have also been investigated [24][25][26][27][28].…”

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

“…Potential-pH (Pourbaix) diagrams predict that copper passivity is expected in neutral and alkaline solutions having pH values of 7-13 [13]. However, the protective layer covering copper surface in this pH region is characterized as being resembled to precipitations of coarse insoluble products (such as copper oxides and hydroxides, CU 2 O, CuO and Cu(OH) 2 [13][14][15][16][17][18]), rather than a thin protective (passive) oxide film.…”

AFM study of forces between silica, silicon nitride and polyurethane pads

“…To optimize the CMP process, various chemicals, abrasives, polishing pads, etc. have been investigated [4][5][6][7][8][9][10][11][12]. However, due to a large number of parameters that can influence the CMP process, the optimization of CMP by experimental means has been difficult.…”