Characterization of Cd1−x Zn x Se thin films deposited at low temperature by chemical route

Hankare, P.P.; Chate, P.A.; Asabe, M.R.; Delekar, Sagar D.; Mulla, I.S.; Garadkar, K. M.

doi:10.1007/s10854-006-9034-2

Cited by 35 publications

(28 citation statements)

References 23 publications

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“…Over the last two decades, II-VI semiconductor thin films have attracted a considerable attention from the research community because of their wide use in the fabrication of solar cells and other optoelectronic devices [1,2]. The group II-VI ternary compound semiconductor has a lot of applications in optoelectronics devices ranging from blue to near ultraviolet region [3].…”

Section: Introductionmentioning

confidence: 99%

“…Coupling of cadmium selenide and zinc selenide would produce a material with various band gap energies * E-mail: Ijazwatoozi@gmail.com depending upon the composition, which may be suitable for increased absorption of solar spectrum and enhanced resistance towards photo corrosion [5]. Cadmium zinc-selenide [(CdZn)Se] is one of the important ternary compound semiconducting materials that due to its excellent optical properties and fast response times has a wide range of potential applications in the photo luminescent, electroluminescent, photoconductive and photovoltaic device applications [1,6]. A number of thin film deposition methods, such as molecular beam epitaxy, electron beam pumping, chemical bath deposition (CBD) etc.…”

Section: Introductionmentioning

confidence: 99%

“…We have prepared Cd 1−x Zn x Se films by the resistive thermal evaporation technique with various zinc content. Cd 1−x Zn x Se thin films have been studied by many researchers [1,[10][11][12], but the effect of annealing temperature on the optical properties of Cd 1−x Zn x Se thin films is rarely presented in the literature. Therefore, it is worthwhile to study the effect of annealing on optical properties of Cd 1−x Zn x Se thin films.…”

Section: Introductionmentioning

confidence: 99%

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Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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Cd 1−x Zn x Se (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd 1−x Zn x Se thin films annealing effect at 400°C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters E o and E d were investigated using a single effective oscillator model. The calculated value of the average excitation energy E o obeys the empirical relation (E o = E g /2) obtained from the single oscillator model.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Ali

Iqbal

Mahmood

et al. 2016

Materials Science-Poland

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“…The energy position of the peaks is relatively lower than the values in the CdSe clusters reported in [28]. The band gap absorption increases by 2.3 eV compared with the bulk (Cd 0.2 Zn 0.8 Se = 2.42 eV) [29] at the end of the milling process. The empirical sizing equation reported by Yu et al [30] is used to further confirm the particle size.…”

Section: Particle Size Analysismentioning

confidence: 59%

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals

Muh’d

Talib

Zainal

et al. 2017

Journal of Nanomaterials

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We report the pinned absorbance and emission spectra of Cd 0.3 Zn 0.7 Se nanocrystals synthesized via mechanical alloying. The first emission peaks of Cd 0.3 Zn 0.7 Se nanocrystals milled for 5 and 10 h are observed at 3.36 eV, while the absorbance spectra of those milled for 10 and 20 h are observed at 4.47 eV. The emission peaks of nanocrystals milled for 5, 10, and 20 h have broad emissions centered at 2.90, 2.88, and 2.92 eV, respectively. Transmission electron microscopy histogram shows that each nanocrystal size distribution has a single population maxima of <2 nm. In addition, the center of each size distribution shifts toward the ultrasmall particles upon continuous milling. Particle sizes (d) of 0.73 nm are calculated from the first excitonic peaks of the pinned absorbance bands through the semiempirical sizing equation. The continuous reduction in particle sizes increases the surface-to-volume ratios of the nanocrystals. This increase eventually results in an increase in the surface states that translate into low photoluminescence intensity of pinned emission.

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“…These are the likely mechanism. [27]. The specific conductance was found to be in the order of 10 -3 -10 -2 (9X cm) -1 .…”

Section: Electrical Conductivitymentioning

confidence: 91%

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Patil

Hankare

Gaikawad

et al. 2011

J Mater Sci: Mater Electron

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Preparation of layered type semiconductor Mo 0.5 W 0.5 S 2 -thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS 2 and WS 2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10 -3 -10 -2 (9X cm) -1 .

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Characterization of Cd1−x Zn x Se thin films deposited at low temperature by chemical route

Cited by 35 publications

References 23 publications

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

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Characterization of Cd1−x Zn x Se thin films deposited at low temperature by chemical route

Cited by 35 publications

References 23 publications

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd1−xZnxSe thin films deposited by close space sublimation technique

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd0.3Zn0.7Se Nanocrystals

Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Contact Info

Product

Resources

About

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Optical spectroscopic analysis of annealed Cd_1−xZn_xSe thin films deposited by close space sublimation technique

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals