Characterization of Amplitude Noise to Phase Noise Conversion in Charge-Compensated Modified Unitravelling Carrier Photodiodes

Xie, Xiaojun; Zang, Jizhao; Beling, Andreas; Campbell, Joe C.

doi:10.1109/jlt.2016.2641967

Cited by 26 publications

(20 citation statements)

References 22 publications

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“…Distinctly, due to the linear gradient doping in the UTC-PD, the electric field intensity of the input side of the collector, the spacer and the output side of the absorber is stronger while the output side of the collector decreases. Compared with the uniform doping profile [6,[16][17][18], the built-in field at the location where it will tend toward zero under high input power operation can be preconditioned to be higher by the graded doping profile. In addition, as shown in figure 2, the increasing rate of junction capacitance of the devices with the gradient doped collection layer gets slower with the input power enhancement.…”

Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

“…As illustrated in figure 1, for PD3, the small electric field in the output side of the collection layer (−0.3 to −0.17 μm) is exhibited to 1.3 kV cm −1 under a low input power. However, the acquired acceleration of the electron will be higher at the initial segment and then travels through the structure because the electric field of the absorber, the spacer and the input-side of the collector are enhanced by the graded doping [18]. Besides, the electric field at the output side of the collection layer goes up to 5 kV cm −1 under the high input power.…”

Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

“…In particular, a fixed distribution of background dopants in the collector can be used to repress the effect [16]. In this paper, by introducing and improving a graded doping profile rather than a uniform doping profile [6,17,18] in the depletion region of UTC-PD, the built-in electric field at the location where it will tend toward zero under high photocurrent density operation can be preconditioned to be higher. Consequently, the device can achieve high output-power with a broadband coverage from dc to sub-terahertz under zero-and low-bias operation, without the associated failure caused by increased thermal loading from higher reverse bias.…”

Section: Introductionmentioning

confidence: 99%

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Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

et al. 2019

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In this paper, physically-based simulations are carried out to investigate and design uni-traveling carrier photodiode (UTC-PD) for high-power sub-terahertz wave generation at zero-and low-bias operation. The reliability of the physically-based simulation is demonstrated by comparing with our experimental result. Both the bandwidth and RF output power of the proposed UTC-PD is significantly improved by careful design the built-in electric field distribution under high-power input. For the optimized UTC-PD with the mesa diameter of 5 μm, its 3dB bandwidth large than 100 GHz even if the photocurrent reaches 6 mA under zero-bias operation. The device can reach a high bandwidth of 92.4 GHz, 105 GHz, and 119.5 GHz under the reverse bias of 0.5 V, 1 V, and 2 V, respectively, even the input photocurrent as high as 18.2 mA. The peak output-power of the device has enhanced at least 7 dB even at 170 GHz and zero-or low-bias operation. Besides, a novel design of mushroom-mesa UTC-PD (MM-UTC-PD) is proposed which with 4.3% improved high-speed performance. The MM-UTC-PD can trade-off between the external quantum-efficiency and bandwidth when miniaturized junction size is required.

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Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

et al. 2019

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“…However, transferring the precise optical timing to the electronic domain has turned out to be highly non-trivial due to the excess phase noise introduced in the optical-to-electronic (OE) conversion processes 10 – 13 in high-speed photodiodes. Recently, there has been rapid progress in overcoming excess phase noise problems, where effective approaches include repetition-rate multiplication 11 , 14 , design of higher linearity photodiode structures 11 , 15 , 16 , including modified-uni-travelling-carrier (MUTC) photodiodes, and finding the optimal photodiode operation conditions for achieving minimal amplitude-to-phase conversion (APC) coefficients 11 , 13 , 17 , 18 . By combining these approaches, recently, 68-as-level timing in OE conversion in 10-GHz microwave extraction has been demonstrated 19 .…”

Section: Introductionmentioning

confidence: 99%

Attosecond electronic timing with rising edges of photocurrent pulses

Hyun

Ahn

et al. 2020

Nat Commun

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There has been remarkable progress in generating ultralow-noise microwaves from optical frequency combs in the last decade. While a combination of techniques has enabled tens to hundreds of attoseconds residual jitter in microwave extraction, so far most of research efforts have been focused on extracting single-tone microwaves from combs; there has been no study on the noise properties of photocurrent pulses directly extracted from the photodiode. Here, we reveal that the residual jitter between optical pulses and rising edges of photocurrent pulses can be in the tens of attoseconds regime. The rising-edge jitter is much lower than the falling-edge jitter, and further, this ultralow rising-edge jitter could be obtained by both p-i-n and (modified-)uni-travelling-carrier photodiodes. This finding can be directly used for various edge-sensitive timing applications, and further shows the potential for ultrahigh-precision timing using silicon-photonic-integrable on-chip p-i-n photodiodes.

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“…Taylor et al adopt the phase bridge method and impulse response method to study AM-to-PM conversion experimentally and find there are several nulls where the AM-to-PM conversion coefficient approaches zero [10]. Some researches use drift-diffusion model to explain the appearance of null points and the effect of optical power on AM-to-PM conversion [11,12]. Simulation result shows that differential capacitance also has an effect on the phase variation [13].…”

Section: Introductionmentioning

confidence: 99%

The effect of bias and frequency on amplitude to phase conversion of photodiodes

Sun

et al. 2020

IEEE Photonics J.

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Fluctuation of the optical power incident on a photodiode will cause phase variation of the electrical signal. This phenomenon is known as amplitude-to-phase (AM-to-PM) conversion. The effects of bias voltage and test frequency on AM-to-PM conversion are described systematically in this paper. A larger null point of AM-to-PM coefficient and smaller phase variation have been observed when bias voltage increases or test frequency decreases. The variation of transit time which is caused by different carrier velocity is the main reason of the phase variation. The influence mechanism of bias on AM-to-PM conversion has been explained in detail by giving the relationship between the carrier drift velocity and the internal electric field related to bias. When the internal voltage exceeds a certain value, the transit time will be almost unchanged and the phase variation is small because of saturated drift velocity. These results can provide guidance to operate the optoelectronic link under optimal conditions.

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Characterization of Amplitude Noise to Phase Noise Conversion in Charge-Compensated Modified Unitravelling Carrier Photodiodes

Cited by 26 publications

References 22 publications

Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

Attosecond electronic timing with rising edges of photocurrent pulses

The effect of bias and frequency on amplitude to phase conversion of photodiodes

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