Characterization of amorphous carbon rich Si1−xCx thin films obtained using high energy hydrocarbon ion beams on Si

Huck, H.; Halac, Emilia B.; Oviedo, Claudia; Zampieri, G.; Pregliasco, R. G.; Alonso, E.V.; Reinoso, M.; Benyacar, M.A.R. de

doi:10.1016/s0169-4332(98)00602-3

Cited by 14 publications

(4 citation statements)

References 15 publications

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“…as antifuses . Correspondingly, there are numerous successful attempts in synthesizing a‐C film, including vapor deposition and liquid deposition . According to the similarity of many physical properties and microstructures to those of either graphite or diamond, a‐C films are usually divided into diamond‐like carbon films and graphite‐like carbon (GLC) films .…”

Section: Introductionmentioning

confidence: 99%

Microstructure and surface roughness of graphite‐like carbon films deposited on silicon substrate by molecular dynamic simulation

Xue

2012

Surface & Interface Analysis

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a Molecular dynamics simulations are performed on the atomic origin of the growth process of graphite-like carbon film on silicon substrate. The microstructure, mass density, and internal stress of as-deposited films are investigated systematically. A strong energy dependence of microstructure and stress is revealed by varying the impact energy of the incident atoms (in the range 1-120 eV). As the impact energy is increased, the film internal stress converts from tensile stress to compressive stress, which is in agreement with the experimental results, and the bonding of C-Si in the film is also increased for more substrate atoms are sputtered into the grown film. At the incident energy 40 eV, a densification of the deposited material is observed and the properties such as density, sp 3 fraction, and compressive stress all reach their maximums. In addition, the effect of impact energy on the surface roughness is also studied. The surface morphology of the film exhibits different characteristics with different incident energy. When the energy is low (<40 eV), the surface roughness is reduced with the increasing of incident energy, and it reaches the minimum at 50 eV.

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Section: Introductionmentioning

confidence: 99%

Microstructure and surface roughness of graphite‐like carbon films deposited on silicon substrate by molecular dynamic simulation

Xue

2012

Surface & Interface Analysis

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“…The most important amorphous semiconductor compounds are binary species of elements of group 14 of the periodic table. Today, while Si−C and Ge−Si alloys are the subject of both chemical and physical detailed studies, − less attention is given to Ge−C alloys. In fact, their synthesis with simple methods is rather difficult, even if different techniques, such as rf sputtering, laser ablation, chemical vapor deposition, and activated reaction evaporation, have been used. − …”

Section: Introductionmentioning

confidence: 99%

Amorphous Germanium Carbides by Radiolysis−CVD of Germane/Ethyne Systems: Preparation and Reaction Mechanisms

et al. 2002

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Amorphous germanium carbides have been prepared by X-ray-activated chemical vapor deposition from germane/ethyne systems. Different mixtures containing the two reagents in variable molar ratios have been investigated with the aim of determining the factors which lead to the highest yields of solid products and of obtaining information on the main ionic and radical reaction paths giving the amorphous material. To this purpose, samples were irradiated consecutively four times in 0.5-h steps. Both qualitative and quantitative GC/MS analyses of the volatile products as well as the determination of the solid composition by elemental analysis were performed after each irradiation. Moreover, the ion/molecule reactions have been studied by ion trap mass spectrometry, determining the ionic reaction mechanisms and the rate constants of the most significant processes. The results indicate that two main and opposite factors affect the formation of the amorphous product: (a) both radical and ionic paths are favored by the presence of ethyne in excess with respect to germane; (b) the increase of content of ethyne in the irradiated mixtures lowers the total number of activated species. Therefore, the best yield of amorphous germanium carbides is obtained when germane and ethyne have a molar ratio between 2/1 and 1/1.

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“…hydrogen assisted diamond/graphite growth processes, are also commonly deduced from the AES C KLL spectra [30][31][32][33][34]. In the literature one can find a lot of different Auger carbon patterns, which consist of different characteristic peaks, even at 249 eV [31] and even dominating the whole carbon AES C KLL spectrum [34].…”

Section: Resultsmentioning

confidence: 99%

Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

Tomkiewicz

Winkler

Krzywiecki

et al. 2008

Applied Surface Science

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Characterization of amorphous carbon rich Si1−xCx thin films obtained using high energy hydrocarbon ion beams on Si

Cited by 14 publications

References 15 publications

Microstructure and surface roughness of graphite‐like carbon films deposited on silicon substrate by molecular dynamic simulation

Microstructure and surface roughness of graphite‐like carbon films deposited on silicon substrate by molecular dynamic simulation

Amorphous Germanium Carbides by Radiolysis−CVD of Germane/Ethyne Systems: Preparation and Reaction Mechanisms

Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

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