Characteristics of MBE-Grown GaN Detectors on Double Buffer Layers Under High-Power Ultraviolet Optical Irradiation

Lui, H. F.; Fong, W.K.; Surya, C.

doi:10.1109/ted.2007.892361

Cited by 2 publications

(2 citation statements)

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“…The results of Ref. [41] show that radiation hardness can be enhanced by decreasing the defect density. Similarly, the improvement in material quality allows for the reduction in the dark current and the increase in the barrier height in Schottky barrier photodiodes [42].…”

Section: Basic Structuresmentioning

confidence: 99%

“…The current research on device optimization consists of improving material quality and contact technology. Illustrative examples are the use of double buffer structures [41], unconventional nucleation layers [42], and new materials for contacts to increase the detection range [43] or even the specific detectivity [44]. The results of Ref.…”

Section: Basic Structuresmentioning

confidence: 99%

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Advances in Group-III-Nitride Photodetectors

Rivera¹,

Pereiro²,

Navarro³

et al. 2010

TOEEJ

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Group-III nitrides are considered to be a strategic technology for the development of ultraviolet photodetectors due to their remarkable properties in terms of spectral selectivity, radiation hardness, and noise. The potential advantages of these materials were initially obscured by their large density of intrinsic defects. The advances were thus associated in general with improvements in material quality. Although technology still also needs improvement, efforts are being intensified in the fabrication of advanced structures for photodetector applications. In particular, this review discusses the recent progress in group-III-nitride photodetectors, emphasizing the work reported on quantum-well-based photodetectors, the use of novel structures exploiting the effect of piezoelectric polarization-induced fields, and polarization-sensitive photodetectors. Furthermore, some ideas can be generalized to other material systems such as ZnO and their related compounds, which exhibit the same crystal structure as group-III nitrides.

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Section: Basic Structuresmentioning

confidence: 99%