Superlattices and Microstructures volume 39, issue 5, P436-445 2006 DOI: 10.1016/j.spmi.2005.10.002 View full text
Ssu-I Fu, Shiou-Ying Cheng, Wen-Chau Liu

Abstract: The characteristics of the InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatment are studied and demonstrated. Based on the use of sulfur passivation, the series resistance of a base-emitter B-E junction can be effectively reduced and the series resistance dominant regimes (decrease of current gain) are presented at a higher collector current regime. The device with sulfur treatment can be operated under extremely low collector current (I C ∼ = 10 −11 A) region, which offers the promise f…

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