Characteristics of gas-assisted focused ion beam etching

Young, Richard; Cleaver, J. R. A.; Ahmed, Hani H.

doi:10.1116/1.586708

Cited by 80 publications

(35 citation statements)

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“…This process greatly enhances the etch rate, as was also reported for other adsorbed halogens. 38 Figure 2 ͑data points marked as ᭺͒ shows the measured excess losses in waveguides etched with the same dose as previously ͑5 ϫ 10 15 Ga + / cm 2 ͒, but with iodine atoms adsorbed to the surface. From the measurements we have extracted an excess loss of 1690± 90 dB/ cm.…”

Section: B Iodine Enhanced Etchingmentioning

confidence: 99%

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Schrauwen

Thourhout

Baets

2007

Journal of Applied Physics

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Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro-and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices impractical when the optical mode is confined near the etched region. These losses are shown to be reduced by the local implantation and etching of silicon waveguides with iodine gas enhancement, followed by baking at 300°C. The excess optical loss in the silicon waveguides drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after baking at 300°C. We present elemental and chemical surface analyses supporting that this is caused by the desorption of iodine from the silicon surface. Finally we present a model to extract the absorption coefficient from the measurements.

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Section: B Iodine Enhanced Etchingmentioning

confidence: 99%

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Schrauwen

Thourhout

Baets

2007

Journal of Applied Physics

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“…Thus, the severity of redeposition is a function of both Y t and the trench proportions. The mechanism that has been proposed to explain the "Classic V Shape"~Yamaguchi et al, FEI Focused Ion Beam Application Note, 1993;Walker, 1993;Young et al, 1993b;Ishitani et al, 1994;Bender et al, 1998! can be instructive in illustrating how the observed limits on aspect ratios attainable by FIB milling are caused by redeposition.…”

Section: Sputtering Ratementioning

confidence: 99%

The Correlation between Ion Beam/Material Interactions and Practical FIB Specimen Preparation

Prenitzer¹,

Urbanik-Shannon

Giannuzzi

et al. 2003

Microsc Microanal

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Abstract:The focused ion beam~FIB! tool has been successfully used as both a stand alone analytical instrument and a means to prepare specimens for subsequent analysis by SEM, TEM, SIMS, XPS, and AUGER.In this work, special emphasis is given to TEM specimen preparation by the FIB lift-out technique. The fundamental ion/solid interactions that govern the FIB milling process are examined and discussed with respect to the preparation of electron transparent membranes. TRIM, a Monte Carlo simulation code, is used to physically model variables that influence FIB sputtering behavior. The results of such computer generated models are compared with empirical observations in a number of materials processed with an FEI 611 FIB workstation. The roles of incident ion attack angle, beam current, trench geometry, raster pattern, and target-material-dependent removal rates are considered. These interrelationships are used to explain observed phenomena and predict expected milling behaviors, thus increasing the potential for the FIB to be used more efficiently with reproducible results.

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“…There have been a few reports on Si and GaAs etching in the presence of a precursor gas to achieve enhanced etching rates and the interest was also focussed on the reduction in damage depth (14)(15)(16). We explored a possible way of controlling these nanodots by processing GaAs in the presence of XeF 2 , usually used for the enhanced etching of insulators.…”

Section: Introductionmentioning

confidence: 98%

Controlling the nanodot formation on GaAs surface during focused ion beam processing

Dhamodaran

Ramkumar

2010

Radiation Effects and Defects in Solids

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GaAs processed using gallium-focused ion beams for the fabrication of photonic devices mostly results in gallium nanodots on the surface. These gallium nanodots may produce unwanted effects and deteriorate the optical and electrical properties of the devices. We have investigated the FIB processing of GaAs with and without exposure to an insulator-enhanced etching precursor gas (XeF 2 ) to explore the use of XeF 2 during GaAs processing. It is reported that without the gas, FIB processing results in nanodots on the surface that vary in size and density depending on processing parameters such as incident energy, beam current, angle and dwell time. Processing with insulator (XeF 2 )-enhanced etching gas irrespective of the process parameters eliminates the nanodots and results in a smooth surface, as characterized by scanning electron microscopy and atomic force microscopy. This method will be useful for surfaces which require dry processing without exposure to any wet chemical etching.

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Characteristics of gas-assisted focused ion beam etching

Cited by 80 publications

References 0 publications

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

Iodine enhanced focused-ion-beam etching of silicon for photonic applications

The Correlation between Ion Beam/Material Interactions and Practical FIB Specimen Preparation

Controlling the nanodot formation on GaAs surface during focused ion beam processing

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