Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

Fu, Chien-Chung; Chien, Pie‐Yau; Chang‐Liao, Kuei‐Shu; Wang, Tien-Ko; Wu, Wen−Fa

doi:10.1016/j.sse.2008.06.024

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Cited by 4 publications

(2 citation statements)

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“…For short-channel devices, the traditional drift -diffusion transport model has been unable to calculate internal and external characteristics, it can not accurately describe velocity overshoot effect [5] . Therefore more suitable physical model select to reflect device internal and external characteristics under short-channel.…”

Section: Simulation Model and Methodsmentioning

confidence: 99%

High K / Metal Gate of Short-Channel SOI NMOSFET Research

Lü

Zhao

2011

AMR

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Short-channel under TaCN/La2O3gate structure SOI NMOSFET has been studied in this paper, contrast with the traditional gate structure gate leakage current and others electrical properties, using TaCN/La2O3gate structure，significantly improved short-channel device performance etc. Additionally, the gate structure in the L=40nm, 30nm and 20nm of C-V characteristic and output characteristic are also studied; all the simulation results coincide with the theoretical analysis.

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Section: Simulation Model and Methodsmentioning

confidence: 99%

High K / Metal Gate of Short-Channel SOI NMOSFET Research

Lü

Zhao

2011

AMR

View full text Add to dashboard Cite

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“…The required work functions of metal gates for n-channel and p-channel MOS devices are around 4.1-4.2 eV and 4.8-5.0 eV, respectively [3]. In the previous work, MoN and TiN/MoN stacks were studied and compared for high WF metal gate applications [4]. The MOS devices with TiN/MoN and MoN/TiN metal gate stacks on SiO 2 dielectric show better electrical characteristics than single layer MoN.…”

Section: Introductionmentioning

confidence: 99%