Channeling characterization of defects in silicon: an atomistic approach

Bianconi, M.; Albertazzi, E.; Balboni, S.; Colombo, Luciano; Lulli, G.; Satta, Alessandra

doi:10.1016/j.nimb.2004.12.038

Cited by 15 publications

(6 citation statements)

References 23 publications

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“…For silicon, it was shown using computer simulations that certain point defects lead to the displacement of up to 9 atoms (9 displaced atoms were found for <110>-split interstitials and 4 for vacancies). 26 In the case of GaAs, the number of displaced atoms per Frenkel pair was estimated experimentally to be 14±4 in weakly damaged material. 27 (viii) The presence of dislocations may be considered within the framework of the Peierls-Nabarro model of edge dislocations (DIS).…”

Section: (V)mentioning

confidence: 99%

Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms

Jozwik

Nowicki

Ratajczak

et al. 2019

Journal of Applied Physics

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Monte Carlo (MC) simulations are a powerful tool for the analysis of ion-solid interactions.The MC code McChasy (Monte Carlo CHAnneling SYmulation) allows the evaluation of Rutherford Backscattering Spectrometry spectra in the Channeling mode to quantify implantation damage. The code works on common PCs and takes into account randomly displaced atoms as well as certain types of extended defects. In this paper, we report recent improvements of the McChasy code, including a unique approach to the calculation of impact parameters between ions and target atoms in three dimensions (along with computing thermal vibrations also in 3D). Furthermore, the use of a rotation matrix to provide different orientations of dislocation lines and an updated model of edge dislocations were also implemented in the code. Dislocation parameters are obtained directly from high-resolution Transmission Electron Microscopy micrographs. Two case studies are presented to highlight the importance of these improvements: Ni-implanted Al was analyzed as an example of a crystal mainly containing dislocations; Er-implanted ZnO was studied, revealing the strength of MC analysis for materials containing a mixture of different defect types, namely randomly displaced atoms and dislocations.* The letter 'Y' comes from the Polish translation of the word 'simulation', which is 'symulacja'.

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Section: (V)mentioning

confidence: 99%

Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms

Jozwik

Nowicki

Ratajczak

et al. 2019

Journal of Applied Physics

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“…͑2͒ with RBS/C data, one has to connect the defect concentration c r to the relative displaced fraction s through a RBS/C defect scattering function, s͑c r ͒, that may depend on the specific defect structure. Recent calculations 21 have provided the shape of this function for several defect structures in silicon. In the case of LiNbO 3 , such information is not available and, therefore, one is forced to make some convenient approximations on the function s͑c r ͒ to perform a meaningful analysis of the data and particularly learn about the transition from the isolated defect ͑preamorphous͒ region to the amorphous region.…”

Section: General Phenomenological Descriptionmentioning

confidence: 99%

“…Therefore, one has to derive such information through a suitable scattering function that relates the RBS/C response to the defect concentration. 21 Then, one obtains the evolution of defect concentration with the irradiation fluence. The results are finally analyzed within a very general context, and the validity of the various theoretical approaches is comparatively assessed.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of ion-beam damage in lithium niobate

García-Navarro

Agulló‐López

Bianconi

et al. 2007

Journal of Applied Physics

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The damage kinetics induced by irradiation with a diversity of swift ions ͑O at 5 MeV; F at 5.1 MeV; Si at 5, 7.5, and 41 MeV; and Cl at 11 and 46 MeV͒ has been investigated in the range of 10 12-10 15 at./ cm 2. It covers from the initial stage where single damage tracks are isolated and well separated, up to the stage where a full amorphous layer is produced. The damage is characterized by the areal fraction of disorder derived from the Rutherford backscattering/ channeling spectra. The data approximately fit an abrupt Avrami-type dependence with fluence. The fluence value at which 50% of the sample surface becomes disordered shows a clear increasing trend with the electronic stopping power of the ion. The trend is consistent with Monte Carlo simulations based on a recent model for defect creation. Moreover, the quantitative agreement for the defect generation rate appears also reasonable.

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“…To analyze the cause of this difference, we have plotted the radius at which the defect concentration falls below 1% as measured from the center of the track in figure 4. This threshold was chosen based on a reasonable error limit in a RBS-c experiment [54] in defect sensitivity for a qualitative comparison. It can be seen that at high stopping powers, the defected track extends to a notably larger region than the one with density fluctuations.…”

mentioning

confidence: 99%

Atomistic two-temperature modelling of ion track formation in silicon dioxide

Leino¹,

Daraszewicz²,

Pakarinen³

et al. 2015

EPL

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We study swift heavy ion track formation in α-quartz using the two-temperature molecular dynamics (2T-MD) model realised as a concurrent multiscale scheme. We compare the simulated track radii to the existing experimental ones obtained from small angle x-ray scattering and Rutherford backscattering experiments. The 2T-MD model provides an explanation of the origin of the track radii saturation at high electronic stopping power. Furthermore, we study the track structure and show that defects formed outside the region of density fluctuations after a swift heavy ion impact may explain the conflicting track radii produced by the two experimental techniques.

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Channeling characterization of defects in silicon: an atomistic approach

Cited by 15 publications

References 23 publications

Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms

Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms

Kinetics of ion-beam damage in lithium niobate

Atomistic two-temperature modelling of ion track formation in silicon dioxide

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