Channel length effect of P3HT:ZnO hybrid blend layer on electrical characteristics of thin-film transistors

Ba, M.; Erouel, Mohsen; Mansouri, Salaheddine; Chouiref, L.; Jdir, Maher; Mır, L. El

doi:10.1016/j.sna.2023.114470

Cited by 4 publications

(2 citation statements)

References 44 publications

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“…It was seen that the energy gap reduce from 2.1 eV (pure P3HT) to 1.75 eV (P3HT:AuNPs (0.1%)) and this device exhibited responsivity of 35.65 μA W −1 . However, the performance of several organic devices based on P3HT thin films were enhanced due to improving the optical, electrical, and photoelectrical properties of P3HT active layer by using doping method such as, P3H:WO3 hybrid thin film transistors [24], nitrogen dioxide sensor based on P3HT:OH-MWCNTs thin film transistor [25], P3HT:ZnO hybrid thin film transistors [26], organic field effect transistor (OFET) based on P3HT/MoS2 thin-film for Ammonia sensing applications [27], photodetectors based on P3HT-rGO composites [28], and organic Schottky diode bas on P3HT thin films [29].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications

Mahdi,

Al-Saymari

2024

Phys. Scr.

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In this work, doped and undoped P3HT thin films are prepared and deposited onto ITO interdigitated electrodes. To improve the optical and the electrical properties of the pure P3HT thin film, chromium(II) chloride was used as dopant material with three different weight percentage, 2.5%, 5%, 10%. Room-temperature current-voltage (I-V) characteristics of the samples were measured, showing an increase in the electrical current with increasing the dopant concentration. Under dark condition, the conductivity and resistivity of the pure P3HT thin films were enhanced by a factor of 5x as a result of doping the P3HT by 10 wt.% of CrCl2. Under light intensity (50 mW/cm2) and at 10 V bias, the conductivity and resistivity obtained from P3HT:CrCl2 (10 wt.%) thin films are 4.75x10-4 S/cm and ~2 kΩ, respectively. These results exhibit an enhancement by a factor of ~12x compared to those obtained from pure P3HT thin film. The current of the photo-sensors based on doped/undoped P3HT thin films are measured as a function of time under light intensity ranging from 0 to 50 mW/cm2 at 1 V bias, exhibiting high photo-response and good reproducibility. Three different wavelengths, white, green, and red were used as light sources to expose the photo-sensors. Under white light, photo-sensor based on P3HT:CrCl2(10 wt.%) exhibit the highest values of the photo-responsivity and quantum efficiency, ~23.3 mA/W and 5.8%, respectively, showing an enhancement by a factor of ~ 11.5x compared to those obtained from the photo-sensor based on pure P3HT.

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Section: Introductionmentioning

confidence: 99%

Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications

Mahdi,

Al-Saymari

2024

Phys. Scr.

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“…A SiO x N y gate insulator was employed to fabricate ZnO TFTs with a low gate leakage current [9], and (Ba,Sr)TiO 3 gate oxide was employed in ZnO-based TFT for low-voltage operation [10]. Moreover, ZnO-based TFTs were fabricated using a conventional SiO 2 gate oxide [11,12]. Top gate ZnO−Al 2 O 3 thin film transistors fabricated using a chemical bath deposition technique was reported [13].…”

Section: Introductionmentioning

confidence: 99%

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Hwang,

Hsu

2023

Nanotechnology

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Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to visible light. Magnesium oxide (MgO) has a wide bandgap (7.8 eV) and high dielectric constant (k). This leads to the development of TFTs using MgO as a gate oxide layer, which can significantly reduce the operating voltage. However, the electrical properties and dielectric constant of MgO are determined from the percentage of oxygen in MgO. In this study, a MgO gate-oxide was deposited on ZnO by magnetron sputtering at various oxygen concentrations (0, 66, and 100%) to fabricate TFTs. With an increase in the oxygen concentration, the oxygen vacancies of MgO were compensated, thereby improving the crystallinity and enhancing the dielectric constant from 6.53 to 12.9 for the oxygen concentrations of 0 and 100%. No pinch-off (saturation) behavior was observed in the TFTs with 0% oxygen; however, the pinch-off voltages were significantly reduced to 17 and 2 V in the TFTs with 66 and 100% oxygen, respectively; hence, the TFT-100 could be operated at a low operating voltage (2V). With an increase in oxygen from 0 to 100%, the threshold voltage and trap-state density significantly decreased from -159 V and 1.6 × 1018 cm−3 to -31.4 V and 6.5 × 1016 cm−3, respectively. The TFTs with 0% oxygen exhibited a higher field-effect mobility of 12 cm2/V-s due to the uncompensated oxygen vacancy in ZnO, which had a higher electron concentration. After introducing oxygen atoms, the field-effect mobility decreased to 0.16 cm2/V-s in the TFTs with 66% oxygen, which can be attributed to the compensated oxygen vacancy and lower electron concentration. In contrast, the field-effect mobility increased to 1.88 cm2/V-s for the TFTs with 100% oxygen due to the enhanced dielectric constant and crystallinity of MgO.

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Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

Jdir,

Erouel,

et al. 2024

J Mater Sci

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Channel length effect of P3HT:ZnO hybrid blend layer on electrical characteristics of thin-film transistors

Cited by 4 publications

References 44 publications

Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications

Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

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Channel length effect of P3HT:ZnO hybrid blend layer on electrical characteristics of thin-film transistors

Cited by 4 publications

References 44 publications

Enhancement of electrical and photo-electrical properties of P3HT:CrCl2 thin films for photo sensing applications

Enhancement of electrical and photo-electrical properties of P3HT:CrCl2 thin films for photo sensing applications

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Indium-doped ZnO nanoparticle effects on the optical and electrical characterization under dark and illumination of OFET: application for optoelectronics and nonvolatile memory devices

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Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications

Enhancement of electrical and photo-electrical properties of P3HT:CrCl₂ thin films for photo sensing applications