Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

Liu, Tao; Kally, James; Pillsbury, Timothy; Liu, Chuan‐Pu; Chang, Houchen; Ding, Junwei; Cheng, Yang; Hilse, Maria; Engel‐Herbert, Roman; Richardella, Anthony; Samarth, N.; Wu, Mingzhong

doi:10.1103/physrevlett.125.017204

Cited by 35 publications

(48 citation statements)

References 34 publications

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“…Researchers have already started exploiting this strategy to engineer higher T c in magnetic materials. [ 106,107 ] A complete understanding of these type of mechanisms is necessary for successful manipulation of magnetic proximity effect in TI.…”

Section: Mechanisms Of Proximity Effectmentioning

confidence: 99%

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Section: Mechanisms Of Proximity Effectmentioning

confidence: 99%

“…Indeed there is tantalizing experimental evidence of significantly elevated T c in both the interfacial magnetism in the TI and the MM layer, even surpassing room temperature. [ 104–107 ]…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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“…The calculated T dependence of damping enhancement at V G = 0 for the in-plane configuration agrees with a few experiments with the FI/TI bilayer. 31,59 Note that at much lower than E F (V G = −250 mV) ≈ 40 meV, our calculation with the in-plane configuration breaks down because of the finite level broadening due to the higher-order impurity scattering. 60 The V G -dependent FMR is characterized by the Landau-Lifshitz-Gilbert theory in the supplementary material.…”

mentioning

confidence: 86%

Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers

Chiba,

Leon,

Komine

2021

Preprint

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“…Proximity coupling of TI and MM has an additional advantage which is not immediately obvious: As discussed in more detail in section 2.0.3, the presence of the strongly spin-orbit coupled TI surface may enhance magnetic order in the MM. Indeed there is tantalizing experimental evidence of significantly elevated T c in both the interfacial magnetism in TI and the MM layer, even surpassing room temperature [97][98][99][100].…”

Section: Magnetic Materials (Mm)-topological Insulator (Ti) Heterostr...mentioning

confidence: 99%

“…Researchers have already started exploiting this strategy to engineer higher T c in magnetic materials [99,100]. A complete understanding of these type of mechanisms is necessary for successful manipulation of magnetic proximity effect in TI.…”

Section: Surface-state-assisted Magnetismmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Bhattacharyya,

Akhgar,

Gebert

et al. 2020

Preprint

View full text Add to dashboard Cite

Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

show abstract

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

Cited by 35 publications

References 34 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Voltage-control of damping constant in magnetic-insulator/topological-insulator bilayers

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

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