Change in d.c. and 1/f noise characteristics of n-submicron MOSFETs due to hot-carrier degradation

Vandamme, L.K.J.; Li, X.

doi:10.1016/s0026-2714(97)00072-3

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2005

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“…The damage caused by the hot-carrier injection is clearly visible in a reduction of the maximum transconductance and an increase in the threshold voltage of the device [1]. An increase in the trap concentration, due to hot-carrier stress, also results in an increase of the LF noise [2]- [4], making the LF noise analysis a useful diagnostic tool in hot-carrier degradation studies.…”

Section: Introductionmentioning

confidence: 99%

Impact of hot-carrier degradation on the low-frequency noise in MOSFETs under steady-state and periodic large-signal excitation

Kolhatkar

Hoekstra

Hof

et al. 2005

IEEE Electron Device Lett.

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This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under periodic large-signal excitation is shown to increase more rapidly than the LF noise in steady-state. Moreover the improvement in the LF noise performance due to periodic large-signal excitation, observed for fresh devices, gradually diminishes as the devices are subjected to hot-carrier stress.

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Section: Introductionmentioning

confidence: 99%