2014 IEEE International Electron Devices Meeting 2014
DOI: 10.1109/iedm.2014.7047076
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Challenges of analog and I/O scaling in 10nm SoC technology and beyond

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Cited by 12 publications
(3 citation statements)
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“…Non-scalable pin size or pitch of solder bumps and balls imposes limitations on the bandwidth density of inter-chip I/O and will prevent power consumption per Gbps of wireline communication from scaling significantly. In [73] Global Foundries projects that the percentage of die area occupied by only analog I/O components would be between 40-60% in the 7 nm node. Therefore, it is expected that as technology scales and SOI processes develop the power-performance gap between wireless inter-chip interconnects and traditional wireline interconnects will continue to widen, pushing the advantage towards the wireless interconnections even more.…”
Section: Impact Of Technology Scaling On Inter-chip Wireless Interconmentioning
confidence: 99%
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“…Non-scalable pin size or pitch of solder bumps and balls imposes limitations on the bandwidth density of inter-chip I/O and will prevent power consumption per Gbps of wireline communication from scaling significantly. In [73] Global Foundries projects that the percentage of die area occupied by only analog I/O components would be between 40-60% in the 7 nm node. Therefore, it is expected that as technology scales and SOI processes develop the power-performance gap between wireless inter-chip interconnects and traditional wireline interconnects will continue to widen, pushing the advantage towards the wireless interconnections even more.…”
Section: Impact Of Technology Scaling On Inter-chip Wireless Interconmentioning
confidence: 99%
“…The high speed serial I/O channels are adopted from 65 nm designs and are shown to have a bandwidth of 15 Gbps with an energy consumption of 5 pJ/bit [108]. As analog I/O circuitry do not scale well with technology node these parameters are representative of current technology trends [73]. For the mm-wave wireless multi-chip system we have considered the inter-chip communication to utilize the mm-wave transceivers that are located at one of the central cores of each chip achieving a WI density of 1/16 WI/core.…”
Section: Comparison With Other Emerging Interconnect Technologiesmentioning
confidence: 99%
“…Furthermore, the applications like Long-term evolution (LTE) phones and emerging sub-6GHz 5G bands demand transistors with better analog/Radiofrequency (RF) performance [3]. Therefore, the development of analog/RF capabilities in advanced FinFET technology nodes is essential to reap the System-on-Chip (SoC) benefits like low power and high performance in smaller area [4], [5].…”
Section: Introductionmentioning
confidence: 99%