CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

Boichot, R.; Coudurier, Nicolas; Mercier, F.; Claudel, A.; Baccar, N.; Milet, Anne; Blanquet, Elisabeth; Pons, M.

doi:10.1007/s00214-013-1419-8

Cited by 13 publications

(10 citation statements)

References 37 publications

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“…In fact, due to kinetics reasons, NH 3(g) is the most important source of N in this range of temperature [8]. Considering the heterogeneous equilibrium at this pressure and temperature range (600-1400…”

Section: Accepted M Manuscriptmentioning

confidence: 99%

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Mercier

Coindeau

Lay

et al. 2014

Surface and Coatings Technology

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Section: Accepted M Manuscriptmentioning

confidence: 99%

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Mercier

Coindeau

Lay

et al. 2014

Surface and Coatings Technology

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“…The reactants used are ammonia NH 3 (99.999 %) and aluminum chlorides AlClx in situ formed via chlorination of high purity Al pellets (99.999 %) with chlorine gas Cl2 (99.999 %) at 800 K. H2 (99.999 %) is used as carrier gas. The details of the process and its modeling can be found in previous studies [28][29][30][31][32]. The total pressure inside the reactor was set to 2000 Pa.…”

Section: Cvd Experimentsmentioning

confidence: 99%

High temperature properties of AlN coatings deposited by chemical vapor deposition for solar central receivers

Chen

Colas

Mercier

et al. 2019

Surface and Coatings Technology

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There is an increasing interest for tower concentrated solar power (CSP) systems which can work at temperatures higher than 1073 K to optimize the efficiency. One of the challenges is to design the receiver that will be heated at high temperatures. On the contrary to coatings in gas turbine engine, the coating/substrate system must have a high thermal conductivity to ensure a good heat transfer to the fluid. Aluminum nitride (AlN) coating, deposited by chemical vapor deposition at 1373 K at a growth rate of 10-50 µm h-1 , was selected for its high thermal conductivity, low thermal expansion coefficient, high temperature stability and its ability to develop stable alumina scales above 1273 K. Cast and ODS (Oxide Dispersion Strengthened) FeCrAl alloys, also alumina-formers, were chosen as model substrates to reduce the influencing parameters in real-life receivers and to study the potential of these coatings. Accelerated cyclic oxidation tests and emissivity measurements allowed the evaluation of AlN coatings as materials for high temperature CSP receivers. The multilayered systems showed low degradation after hundreds of thermal cycles at 1073 K in air and can support higher temperatures (1373 K) for 100 to 500 h depending on the coating thickness. Nevertheless the fast cyclic oxidations in solar furnace generated cracks through the coatings. The measurement of the optical properties also revealed a decrease of the absorptivity after oxidation.

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“…Boichot et al used thermochemical modelling to better understand a newly developed high temperature CVD process for aluminum nitride (AlN) [71]. Of especial interest to model where conditions in the boundary layer and close to the surface -parameters very hard to extract from experiments.…”

Section: An Overview Of the Special Collection Of Papers On Cvd And Amentioning

confidence: 99%

Studying chemical vapor deposition processes with theoretical chemistry

Pedersen

Elliott

2014

Theor Chem Acc

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In a chemical vapor deposition (CVD) process, a thin film of some material is deposited onto a surface via the chemical reactions of gaseous molecules that contain the atoms needed for the film material.These chemical reactions take place on the surface and in many cases also in the gas phase. To fully understand the chemistry in the process and thereby also have the best starting point for optimizing the process, theoretical chemical modeling is an invaluable tool for providing atomic-scale detail on surface and gas phase chemistry. This overview briefly introduces to the non-expert the main concepts, history and application of CVD, including the pulsed CVD variant known as atomic layer deposition (ALD), and put into perspective the use of theoretical chemistry in modeling these processes. KeywordsChemical Vapor Deposition, Atomic Layer Deposition, Thin Films, Surface Chemistry, Gas Phase Chemistry, Theoretical Chemistry 3 An introduction to vapor-phase deposition techniquesThin films are layers of materials with thicknesses ranging from less than one nanometer (a few atomic layers) to hundreds of micrometers (for reference, a human hair is about 75 µm thick) [1]. The importance of thin films in today's society is enormous and thin films can be found everywhere; from low friction coatings in a car engine to the anti-reflecting coating on the lenses of spectacles, as well as the decorative coating on their frames. Most metal objects around us have been machined by cutting tools that are coated with a hard, wear-resistant thin film. Replacement parts for the human body, such as hip-joints, are often coated with a thin film to make them more bio-compatible.Furthermore, today's nanoelectronic devices are built up very precisely from stacks of thin films of various materials with different electrical properties, with some of the films as thin as one atomic layer. Technologically important thin films can be amorphous, polycrystalline or epitaxially-grown single crystals and the properties of the materials can often be tuned with great precision to suit various applications.To coat an object (the "substrate") with a thin film, it is often preferred to start from atoms or molecules in a vapor phase and place the object(s) to be coated in that vapor, letting atoms and/or molecules from the vapor build up a thin film on the surface of the object. These vapor-based thin film synthesis methods are classified as either physical vapor deposition (PVD) or chemical vapor deposition (CVD), depending on whether the film deposition process is driven by physical impacts or by chemical reactions, respectively. Generating the vapor in the reactor is of course straightforward when the desired element is available in gaseous form, e.g. O 2 , but this is not the case for most elements. Therefore, in PVD, a solid sample containing the target elements is subjected to substantial energy, often in the form of a plasma or an electric discharge, thereby ejecting atoms and producing a vapor, which can then condense onto the substrate ...

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CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

Cited by 13 publications

References 37 publications

Niobium nitride thin films deposited by high temperature chemical vapor deposition

Niobium nitride thin films deposited by high temperature chemical vapor deposition

High temperature properties of AlN coatings deposited by chemical vapor deposition for solar central receivers

Studying chemical vapor deposition processes with theoretical chemistry

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