Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers

Janssen, G. C. A. M.; Abdalla, Mostafa; Keulen, Fred van; Pujada, B. R.; Venrooy, B. van

doi:10.1016/j.tsf.2008.07.014

Cited by 602 publications

(311 citation statements)

References 25 publications

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“…For a single-crystal anisotropic material such as silicon, its biaxial modulus (M s Si ) differs with its orientation. According to [17] After the laser scanning measurement has been completed on the bimaterial, the Cu-films were etched away using a mixture of H 2 O 2 and H 2 ÁSO 4 (1:4). Thereafter the bare silicon substrate is measured alone and by the use of the Stoney equation the stress in the film is determined.…”

Section: Methodsmentioning

confidence: 99%

Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu

et al. 2011

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In this study, the role of electrodeposition chemistry on thermo-mechanical behavior of different Cu-films is examined. For this study, three different Cu electrodeposition chemistries were analyzed using Timeof-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), Focused Ion Beam (FIB), Laser Scanning method, Electron Backscattered Diffraction, and the Nano-indentation techniques. It is found that the level of impurity in Cu-films, resulting from the used electrodeposition additives, has a significant impact on their microstructural and thermomechanical behavior. Cu-films having high impurity content showed residual stress levels that are three times higher than the less impure Cu-films. This implies that the use of such impure electrodeposition chemistry for the filling of TSVs will result in high residual stresses in the Cu-TSV, thus inducing higher stresses in Si, which could be a reliability concern. Therefore, the choice of the used electrodeposition chemistry for the filling of TSVs should not be limited only to the achievement of a void free Cu-TSV, as consideration ought to be given to their thermo-mechanical response.

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Section: Methodsmentioning

confidence: 99%

Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu

et al. 2011

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“…The average stress-thickness product of the film was calculated by measuring changes of the substrate curvature during film deposition and implementing the modified Stoney equation [20,21]. The sign of the slope of the stress-thickness product curve as a function of the film thickness gives the sign of the stress where, by convention, negative values signify compressive stress and positive values signify tensile stress.…”

Section: Study Of Film Nucleation and Coalescencementioning

confidence: 99%

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Magnfält¹,

Elofsson²,

Abadias³

et al. 2013

J. Phys. D: Appl. Phys.

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“…In the absence then of experimental verification, there is a widely adopted working hypothesis that the stresses developed over small structures having edges and vertical walls are equivalent to the fullsheet planar counterpart, which can be straightforwardly measured by wafer curvature techniques. 19 Here, to verify this hypothesis or, to understand at which level the material deviates from the full sheet characteristics, we conceived a transistor-like model structure in Si, allowing the study of the strains imposed by a stressed SiN film. Those strains, being the reaction to the stresses developed in the film, shall allow us to deduce their distributions.…”

mentioning

confidence: 99%

“…For reference, we produced the SiN and SiO 2 layers in full sheet wafer configuration, and measured the curvature of the substrates. The in-plane stresses were then calculated using the Stoney's equation 19 and the results were σ SiN = 1.3 ± 0.1 GPa and σ sio 2 = 50 ± 5 Mpa.…”

mentioning

confidence: 99%

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Reboh

Morin²,

Hÿtch

et al. 2013

APL Materials

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To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part

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Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers

Cited by 602 publications

References 25 publications

Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu

Impact of the electrodeposition chemistry used for TSV filling on the microstructural and thermo-mechanical response of Cu

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

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